2011
DOI: 10.1002/qua.23179
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Off‐center shallow donors in a spherical Si quantum dot with dielectric border

Abstract: Within the effective mass approximation and using a finite element method, the ground state energy and electron cloud localization of the shallow donors in a Si quantum dot (QD) with dielectric border are calculated. Simultaneous effects of dielectric mismatch (DM) at the core-shell interface, the impurity radial position, and the external electric field on the electronic properties are investigated. We found that (i) for a freestanding QD, the binding energy is strongly enhanced due to the additional interact… Show more

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Cited by 8 publications
(2 citation statements)
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“…This can be due to the quantum confinement inside the core. But outside the core the wavefunction becomes more spread out [51] increasing the dipole matrix elements.…”
Section: Nanostructure Core-shell With Off-center Hydrogenic Impuritymentioning
confidence: 99%
“…This can be due to the quantum confinement inside the core. But outside the core the wavefunction becomes more spread out [51] increasing the dipole matrix elements.…”
Section: Nanostructure Core-shell With Off-center Hydrogenic Impuritymentioning
confidence: 99%
“…Among the pioneers who have examined this case, Allan et al (1995) [35] have studied the hydrogenic impurity levels, dielectric constant, and Coulomb charging effects in silicon crystallites. Afterwards, Cristea and Niculescu [36] have reported the electronic properties of a spherical Si QD with dielectric border, considering the dielectric mismatch at the core/shell interface, using a finite element method with triangular element and variable steps. Such kinds of systems with various material types such as inverted and non inverted CdSe/ZnS [37], type-I PbSe/CdSe CSQD [38] and recently, inverted and non inverted CdSe/ZnTe [39], have been subject of numerous studies taking into consideration various types of external constraints.…”
Section: Introductionmentioning
confidence: 99%