“…In contrast with our last report, where the non-SC component of the cathodic pole was connected with aw ire to silicon, [50] it was here directly deposited on the SC, which is highly beneficialf or minimizing electrical connections and thus the size of the device. The carbon part was made of ab and of pyrolyzed photoresist film (PPF), [52,53] deposited at the edgeo ft he p-SiH surface( see the Experimen-tal Sectioni nt he Supporting Information form ore details). The gate operating principle is shown in Figure 2a.I na bsence of light, that is, when In2 = 0, reduction occurs at the PPF only when E app = 10 V, that is, when In1 = 1, because the effective BE length in the dark (l = 3cmwhen p-SiH is not electrochemically active) does not allow as ufficient DV max to trigger Reactions (2) and (3) for E app = 7V .I ndeed, Equation (1) showst hat in this case DV max = 2.3 V, which is slightly lower than the threshold value neededt ot rigger Reactions (2) and (3) on carbon,a s showni nF igure S6.…”