Bifurcation analysis of the class-E inverter for switching-pattern derivations

Nagashima, Tadamichi; Wei, Xiuqin; Kousaka, Takuji; Sekiya, Hiroo

doi:10.1587/comex.1.33

Cited by 4 publications

(3 citation statements)

References 5 publications

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“…In this paper, we consider three switching patterns at the turnon instant in the class-E inverter [35]. Figure 3 shows examples of the switch voltage and current waveforms of the class-E inverter.…”

Section: B Switching Patterns In Class-e Invertermentioning

confidence: 99%

Novel Design Approach of Soft-Switching Resonant Converter With Performance Visualization Algorithm

et al. 2020

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This paper presents a new design approach for the soft-switching resonant converter with satisfying the multiple design conditions. As an example, the FM controlled class-E resonant converter is designed. By applying the class-E inverter at the inverter part, the resonant converter works with high efficiency at high frequencies. The class-E inverter has, however, problems, which are the high peak value of the switch voltage and the difficulty of the zero-voltage switching continuation against the load variations. Additionally, there is a restriction on the peak value of the transformer voltage. In the proposed design approach, we can find the proper component values, which satisfy the multiple constraint conditions simultaneously, by full-use of the numerical computations of the converter-characteristic visualization on the parameter space. From the quantitative agreements between the experimental results and numerical predictions, the validity and effectiveness of the proposed design approach were confirmed. INDEX TERMS Resonant converter, class-E inverter, push-pull class-E inverter, class-D full-wave rectifier, zero-voltage switching, frequency modulation control.

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Section: B Switching Patterns In Class-e Invertermentioning

confidence: 99%

Novel Design Approach of Soft-Switching Resonant Converter With Performance Visualization Algorithm

et al. 2020

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“…Class-E topology has been attracting great deal of attentions in recent years as high-frequency inverter [4]- [8]. Nonetheless, class-E topology has a problem of high drain-source voltage, which becomes an obstacle to high output power using GaN-HEMTs.…”

Section: Introductionmentioning

confidence: 99%

13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by ‘L-S Network’

Oyane

Thilak

Masuda

et al. 2022

IEICE Trans. Electron.

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This paper proposes a topology of high power, MHzfrequency, half-bridge resonant inverter ideal for low-loss Gallium Nitride high electron mobility transistor (GaN-HEMT). General GaN-HEMTs have drawback of low drain-source breakdown voltage. This property has prevented conventional high-frequency series resonant inverters from delivering high power to high resistance loads such as 50Ω, which is typically used in radio frequency (RF) systems. High resistance load causes hardswitching also and reduction of power efficiency. The proposed topology overcomes these difficulties by utilizing a proposed 'L-S network'. This network is effective combination of a simple impedance converter and a series resonator. The proposed topology provides not only high power for high resistance load but also arbitrary design of output wattage depending on impedance conversion design. In addition, the current through the series resonator is low in the L-S network. Hence, this series resonator can be designed specifically for harmonic suppression with relatively high quality-factor and zero reactance. Low-distortion sinusoidal 3kW output is verified in the proposed inverter at 13.56MHz by computer simulations. Further, 99.4% high efficiency is achieved in the power circuit in 471W experimental prototype.

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“…The class-E amplifier [17][18][19][20][21][22][23][24][25][26][27] is a typical high-frequency resonant circuit. Because the switch voltage can satisfy the class-E zero-voltage switching and zero-derivative switching (ZVS/ZDS) conditions in the class-E amplifier, it is possible to achieve low switching losses at high frequencies.…”

Section: Introductionmentioning

confidence: 99%

High-frequency resonant gate driver with isolated class-E amplifier

Sugano

Sun

Sekiya

2018

NOLTA

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This paper proposes the high-frequency resonant gate driver, which is based on the class-E amplifier with isolation transformer, for driving SiC MOSFETs. By applying the isolation transformer to the resonant filter, the destruction risk decreases in the proposed driver. It is possible to obtain the sinusoidal driving waveform without distortion because the proposed driver includes the gate capacitance and the gate resistance in the resonant circuit. Additionally, low power consumption of the driver can be achieved by satisfying the class-E zero-voltage switching and zero-derivative switching conditions. Therefore, the thermal problem can be mitigated in the proposed driver. As a result, the proposed driver is suitable for the SiC driver at high frequencies, in particular. The high-frequency SiC drive was confirmed by simple test circuit. Additionally, the 7 MHz SiC class-E amplifier was implemented, which was driven by the proposed driver. The validity of the analytical expressions and the design procedure were shown by the quantitative agreements between analytical and experimental results.

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Bifurcation analysis of the class-E inverter for switching-pattern derivations

Cited by 4 publications

References 5 publications

Novel Design Approach of Soft-Switching Resonant Converter With Performance Visualization Algorithm

Novel Design Approach of Soft-Switching Resonant Converter With Performance Visualization Algorithm

13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by ‘L-S Network’

High-frequency resonant gate driver with isolated class-E amplifier

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