Abstract:This paper proposes a topology of high power, MHzfrequency, half-bridge resonant inverter ideal for low-loss Gallium Nitride high electron mobility transistor (GaN-HEMT). General GaN-HEMTs have drawback of low drain-source breakdown voltage. This property has prevented conventional high-frequency series resonant inverters from delivering high power to high resistance loads such as 50Ω, which is typically used in radio frequency (RF) systems. High resistance load causes hardswitching also and reduction of power… Show more
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