Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory

Abstract

The dual functions in HfOx-based ReRAM and 2V-programmable via-fuse technology featuring in simple metal-insulator-metal BEOL process are presented, which can integrate with the current metal fuse technology. The impact of via-size, ReRAM, and via-fusing programming windows, stacked structures, and integration capability has been extensively studied. The performance and reliability risk assessments show that the ReRAM and via fuse can sustain at 438 K for 500 hours without any degradation. Our results provide pathfinding of high density, integration capability, low programing voltage, multi-functionality between programmable read-only memory (PROM) and ReRAM co-existing in embedded applications.

Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory

“…3c, right) are conducted to examine the protrusion region in detail, where the electromigration (EM) or SIV (stress-induced voiding, discuss later) are excluded since the protrusion or voids created are different in the microstructure as reported. [39][40][41][42] Among one-time programmable fuse ap-plications, there are three irreversible states, i.e., deep RESET (DR), dielectric break-down (DB), and via-fusing (VF). Fig.…”