Bidirectional Optical Interconnection at Gb/s Data Rates With Monolithically Integrated VCSEL-MSM Transceiver Chips

Stach, Michael; Rinaldi, F.; Chandran, Manikandan; Lorch, S.; Michalzik, Rainer

doi:10.1109/lpt.2006.885635

Cited by 14 publications

(4 citation statements)

References 6 publications

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“…The lithographic process is similar to the one formerly described in Ref. 4, but an important difference arises due to the implemen- tation of the additional 1 µm-thick Al 0.3 Ga 0.7 As layer. To access the highly p-doped cap layer of the centered VCSEL homogeneously, a dry-etching process is applied followed by wet-etching with a suitable citric acid solution.…”

Section: Transceiver Chip Fabricationmentioning

confidence: 90%

True bidirectional optical interconnects over multimode fiber

et al. 2010

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We report the fabrication and properties of 850 nm wavelength AlGaAs/GaAs-based transceiver chips, in which vertical-cavity surface-emitting lasers (VCSELs) and photodiodes are monolithically integrated. Various types of devices allow half-and full-duplex bidirectional optical interconnection at multiple Gbit/s data rates over a single butt-coupled glass or polymer-clad silica optical fiber with core diameters of 100 or 200 µm. Whereas metal-semiconductor-metal (MSM) photodiodes are employed for these large-area fibers, we also investigate the integration of PIN-type photodiodes which appear more promising in combination with standard 62.5 or 50 µm core diameter graded-index multimode fibers. This interconnect solution based on two identical chips is attractive owing to lower volume, weight, and cost. Applications will be found in home, in-building, industrial, or automotive networks and potentially within computer clusters or central offices.

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Section: Transceiver Chip Fabricationmentioning

confidence: 90%

True bidirectional optical interconnects over multimode fiber

et al. 2010

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“…In our first approach, several designs of monolithically integrated VCSELs and MSM photodiodes for 200 and 100 µm core diameter MMFs were presented in [9][10][11][12][13][14][15][16][17][18]. Figure 1 shows a transceiver chip based on an 850 nm VCSEL centered in the MSM PD for efficient coupling to a 100 µm MMF.…”

Section: Previous Workmentioning

confidence: 99%

Single-Fiber Bidirectional Optical Data Links with Monolithic Transceiver Chips

Kern

Paul

Wahl

et al. 2012

Advances in Optical Technologies

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We report the monolithic integration, fabrication, and electrooptical properties of AlGaAs-GaAs-based transceiver (TRx) chips for 850 nm wavelength optical links with data rates of multiple Gbit/s. Using a single butt-coupled multimode fiber (MMF), low-cost bidirectional communication in half- and even full-duplex mode is demonstrated. Two design concepts are presented, based on a vertical-cavity surface-emitting laser (VCSEL) and a monolithically integrated p-doped-intrinsic-n-doped (PIN) or metal-semiconductor-metal (MSM) photodetector. Whereas the VCSEL-PIN photodiode (PD) chips are used for high-speed bidirectional data transmission over 62.5 and 50 μm core diameter MMFs, MSM TRx chips are employed for 100 or 200 μm large-area fibers. Such a monolithic transceiver design based on a well-established material system and avoiding the use of external fiber coupling optics is well suited for inexpensive and compact optical interconnects over distances of a few hundred meters. Standard MMF networks can thus be upgraded using high-speed VCSEL-PIN transceiver chips which are capable to handle data rates of up to 10 Gbit/s.

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“…For example, a photodetector placed on top of a VCSEL can be used to dynamically monitor the laser output [1]. Monolithically integrated lasers and photodetectors can be used in a low cost optical transceiver component [2][3][4][5]. The integration of VCSELs with positive-intrinsic-negative (PIN) photodiodes can also be used in biomedical sensing [6].…”

Section: Introductionmentioning

confidence: 99%

“…Three types of detectors can be integrated with VCSELs: metal-semiconductor-metal (MSM) photodetectors [5], resonant cavity photodetectors (RCPDs) [2,3], and PIN photodetectors [1,4,6]. For the positionsensing application, small-area high-sensitivity detectors can be used to spatially resolve reflections from a corrugated surface.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional integration of a vertical-cavity surface-emitting laser and photodetectors for position sensing

et al. 2008

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Noncontact long-range position sensing is desirable for a number of applications. We have designed and fabricated a monolithically integrated vertical-cavity surface-emitting laser (VCSEL) and p-type/intrinsic/n-type (PIN) photodetectors for optical position sensing. Calculations using the reflection from a periodic metallic corrugation as a position gauge indicate resolution in the submicron regime. High device uniformity is obtained using novel fabrication techniques. We observe a threshold current of 0.52 mA for the VCSELs and a detector responsivity of 0.38 A/W at 840 nm. The optical cross talk between VCSELs and detectors is also quantified.

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Bidirectional Optical Interconnection at Gb/s Data Rates With Monolithically Integrated VCSEL-MSM Transceiver Chips

Cited by 14 publications

References 6 publications

True bidirectional optical interconnects over multimode fiber

True bidirectional optical interconnects over multimode fiber

Single-Fiber Bidirectional Optical Data Links with Monolithic Transceiver Chips

Two-dimensional integration of a vertical-cavity surface-emitting laser and photodetectors for position sensing

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