Biaxially oriented CaF2 films on amorphous substrates

Li, H.-F.; Parker, Thomas C.; Tang, Fu; Wang, G.-C.; Lu, Toh‐Ming; Lee, S.

doi:10.1016/j.jcrysgro.2008.04.040

Cited by 39 publications

(37 citation statements)

References 24 publications

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“…According to the crystal habit, the fastest growth direction should be the [100] direction normal to the surface [23]. But from experiments, the out-of-plane of the CaF 2 nanorods was found to be the [111] direction with a strong biaxial orientation {111}<121> [27]. We also showed that a continuous biaxial CaF 2 film grown with a normal incidence flux onto the CaF 2 nanorods retained the biaxial texture of CaF 2 nanorods [27].…”

Section: Principles Of Biaxial Layer Formationmentioning

confidence: 80%

Quasi-single Crystal Semiconductors on Glass Substrates Through Biaxially Oriented Buffer Layers

Gaire

et al. 2010

MRS Proc.

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High efficiency photovoltaic devices are normally fabricated on single crystalline substrates. These single crystalline substrates are expensive and volume production for widespread usage has not been realistic. To date, large volume production of solar cells is on less expensive non-crystalline substrates such as glass. Typically the films grown on glass are polycrystalline with less than ideal efficiency. It was proposed that a dramatic gain in the efficiency may be achieved if one uses a biaxially oriented buffer layer on glass to grow biaxial semiconductor films to fabricate solar devices compared to that of films grown directly on glass. Biaxial films are not exactly single crystal but have strongly preferred crystallographic orientations in both the out-of-plane and in-plane directions. Typically the misorientation between grains can be small (within a few degrees) and may possess low carrier recombination rate. In this paper we shall discuss growth techniques that would allow one to produce biaxial buffer layers on glass. A specific strategy using an atomic shadowing mechanism in an oblique angle deposition configuration that allows one to grow biaxial buffer layers such as CaF2on glass substrate will be discussed in detail. Results of heteroepitaxy of semiconductor materials such as CdTe and Ge on these biaxial buffer/glass substrates characterized by x-ray pole figure, reflection high energy electron diffraction (RHEED) pole figure and transmission electron microscopy (TEM) will be presented.

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Section: Principles Of Biaxial Layer Formationmentioning

confidence: 80%

Quasi-single Crystal Semiconductors on Glass Substrates Through Biaxially Oriented Buffer Layers

Gaire

et al. 2010

MRS Proc.

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“…The deposition details of these films can be found elsewhere. 7 The resulting CaF 2 nanorods were approximately 100 nm in diameter and approximately 700 nm tall, as shown in Fig. 1a.…”

Section: Experiments Detailsmentioning

confidence: 90%

Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer

LiCausi

Yuan

Tang

et al. 2009

Journal of Elec Materi

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Continuous biaxially textured CdTe films were grown on biaxial CaF 2 buffer layers. The CaF 2 nanorods were grown by oblique angle vapor deposition and possessed a {111}h121i biaxial texture. The CdTe film was deposited by metal organic chemical vapor deposition (MOCVD). Film morphology and the CdTe/ CaF 2 interface were studied by scanning electron microscopy and transmission electron microscopy. Characterization showed that small CdTe grains formed initially from the CaF 2 surfaces. These small grains then merged into large columnar grains during growth. Analysis revealed that the crystalline orientation of the CdTe film followed the biaxial texture of the CaF 2 nanorods.

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“…Detailed growth conditions for CaF 2 nanorods can also be found elsewhere. 1 The as-deposited nanorods are nearly perpendicular to the substrate surface. The diameter of the nanorods is 100 nm.…”

Section: A Growth Conditions Of Caf 2 Nanorodsmentioning

confidence: 99%

“…CaF 2 films with vertically aligned nanorods have been recently observed by Li et al 1 These CaF 2 nanorods have been grown by using the oblique angle deposition technique. 2 The deposited nanorods present a unique microstructure due to shadowing and surface diffusion effects during the deposition process.…”

Section: Introductionmentioning

confidence: 99%

Unidirectional self-patterning of CaF₂ nanorod arrays using capillary pressure

Han

et al. 2011

J. Mater. Res.

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Biaxially oriented CaF2 films on amorphous substrates

Cited by 39 publications

References 24 publications

Quasi-single Crystal Semiconductors on Glass Substrates Through Biaxially Oriented Buffer Layers

Quasi-single Crystal Semiconductors on Glass Substrates Through Biaxially Oriented Buffer Layers

Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer

Unidirectional self-patterning of CaF₂ nanorod arrays using capillary pressure

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Biaxially oriented CaF2 films on amorphous substrates

Cited by 39 publications

References 24 publications

Quasi-single Crystal Semiconductors on Glass Substrates Through Biaxially Oriented Buffer Layers

Quasi-single Crystal Semiconductors on Glass Substrates Through Biaxially Oriented Buffer Layers

Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer

Unidirectional self-patterning of CaF2 nanorod arrays using capillary pressure

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Unidirectional self-patterning of CaF₂ nanorod arrays using capillary pressure