Biaxially Extended Thiophene–Fused Thiophene Conjugated Copolymers for High Performance Field Effect Transistors

Lin, Chih-Jung; Lee, Wen‐Ya; Lu, Chih-Wei; Lin, Han‐Wei; Chen, Wen‐Chang

doi:10.1021/ma202017q

Cited by 29 publications

(31 citation statements)

References 60 publications

(92 reference statements)

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“…At the same time, the intensity ratios of 2nd peak/3rd peak decreased to be 0.990, 0.987, 0.975, and 0.975 for CF, CF:Tol, CF:CB, and CF:DCB, respectively. These results suggested that the use of higher bp solvent additives assisted the interchain interactions among the polymers in the film state (as discussed further below) [26,27,30]. The interchain interactions were further enforced by thermal annealing, as indicated in Fig.…”

Section: Resultsmentioning

confidence: 74%

A new rigid planar low band gap PTTDPP-DT-DTT polymer for organic transistors and performance improvement through the use of a binary solvent system

Kim

Choi

et al. 2016

Dyes and Pigments

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Section: Resultsmentioning

confidence: 74%

A new rigid planar low band gap PTTDPP-DT-DTT polymer for organic transistors and performance improvement through the use of a binary solvent system

Kim

Choi

et al. 2016

Dyes and Pigments

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“…The larger core size of IDTT-TPA reduced the repulsion forces between the neighboring bulky side-chain groups and led to am ore coplanar backbone conformationw ith closer molecular packing. [27] The enhanced planarity of IDTT-TPA also increased the lengtho f conjugation. [28] The 4-hexylphenyl groups in IDT-TPA were ar- www.chemsuschem.org ranged slightly perpendicular to the plane of the IDT core, which led to alarge steric hindrance effect in IDT-TPA molecular packing, whereas they were more parallel to the IDTT core in IDTT-TPA,w hich led to decreased steric hindrance along the axis of IDTT-TPA when compared with IDT-TPA.T hus, the rigid ande xtended coplanar structure of IDTT-TPA was beneficial for effective p-stacking, which resulted in mutually parallel aromaticr ings stacking with an offset pattern (Figure 2b).…”

Section: Resultsmentioning

confidence: 99%

Dopant‐Free Hole‐Transport Materials Based on Methoxytriphenylamine‐Substituted Indacenodithienothiophene for Solution‐Processed Perovskite Solar Cells

et al. 2017

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Solution-processed hole transporting materials (HTMs) that are dopant-free show promise for use in low-cost, high-performance perovskite solar cells (PSCs). The highest-efficiency PSCs use organic HTMs, many of which have low mobilities and therefore require doping, which lowers the device stability. Additionally, these materials are not easily scaled because they often require complicated synthesis. Two new HTMs (IDT-TPA and IDTT-TPA) were synthesized, which contained either an extended fused-ring indacenodithiophene (IDT) or indacenodithienothiophene (IDTT) core and strong electron-donating methoxytriphenylamine (TPA) groups as the end-capping units. The extended conjugation in the backbone of IDTT-TPA resulted in stronger π-π interactions (3.321 Å) and a higher hole mobility of 6.46×10 cm V s when compared with that of IDT-TPA (9.53×10 cm V s ). A dopant-free, planar PSC that contained IDTT-TPA was fabricated and exhibited a high power conversion efficiency (PCE) of 15.7 %. This cell exhibited a higher PCE and less hysteresis than devices that contained IDT-TPA.

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“…26,[29][30][31] Therefore, the use of those high bp solvents to improve D-A polymer-based OTFT performances would be beneficial. However, it is difficult to form high quality polymer films by spin-coating such high bp solutions onto hydrophobic gate dielectric surfaces, such as ODTS-treated SiO 2 gate dielectrics.…”

Section: Introductionmentioning

confidence: 99%

“…The band III peaks were observed at 794, 798, and 798 nm for Tol, CB, and DCB, respectively. This red-shift suggests that the highbp solvents promoted the interchain interactions in the solid state 26,31,41. Thermal annealing further redshifted the absorption peaks, indicating a further enhancement in the interchain interactions, as indicated inFigure 4b,c.…”

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confidence: 96%

Low-Band-Gap Polymer-Based Ambipolar Transistors and Inverters Fabricated Using a Flow-Coating Method

et al. 2016

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The performances of organic thin film transistors (OTFTs) produced by polymer solution casting are tightly correlated with the morphology and chain-ordering of semiconducting polymer layers, which depends on the processing conditions applied. The slow evaporation of a high boiling point (bp) solvent permits sufficient time for the assembly of polymer chains during the process, resulting in improving the film crystallinity and inducing favorable polymer chain orientations for charge transport. The use of high bp solvents, however, often results in de-wetting of thin films formed on hydrophobic surfaces, such as the commonly used octadecyltrichlorosilane (ODTS)-treated SiO 2 gate dielectric. De-wetting hampers the formation of uniform and highly crystalline semiconducting active channel layers. In this manuscript, we demonstrated the formation of highly crystalline dithienothienyl diketopyrrolopyrrole (TT-DPP)-based polymer films using a flow-coating method to enable the fabrication of ambipolar transistors and inverters.Importantly, unlike conventional spin-coating methods, the flow-coating method allowed us to use high bp solvents, even on a hydrophobic surface, and minimized the polymer solution waste. The crystalline orientations of the TT-DPP-based polymers were tuned depending on the solvent used (four different bp solvents were tested) and the employment of a thermal annealing step. The use of high bp solvents and thermal annealing of the polymer films significantly enhanced the crystalline microstructures in the flowcoated films, resulting in considerable carrier mobility increase in the OTFTs compared to the spin-coated films. Our simple, inexpensive, and scalable flow-coating method, for the first time employed in printing semiconducting polymers, presents a significant step toward optimizing the electrical performances of organic ambipolar transistors through organic semiconducting layer film crystallinity engineering.

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Biaxially Extended Thiophene–Fused Thiophene Conjugated Copolymers for High Performance Field Effect Transistors

Cited by 29 publications

References 60 publications

A new rigid planar low band gap PTTDPP-DT-DTT polymer for organic transistors and performance improvement through the use of a binary solvent system

A new rigid planar low band gap PTTDPP-DT-DTT polymer for organic transistors and performance improvement through the use of a binary solvent system

Dopant‐Free Hole‐Transport Materials Based on Methoxytriphenylamine‐Substituted Indacenodithienothiophene for Solution‐Processed Perovskite Solar Cells

Low-Band-Gap Polymer-Based Ambipolar Transistors and Inverters Fabricated Using a Flow-Coating Method

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