A new rigid planar low band gap PTTDPP-DT-DTT polymer for organic transistors and performance improvement through the use of a binary solvent system

Kim, Min Je; Choi, Jong Yong; An, Gukil; Kim, Hyun-Jung; Kang, Youngjong; Kim, Jai Kyeong; Son, Hae Jung; Lee, Jung Heon; Cho, Jeong Ho; Kim, BongSoo

doi:10.1016/j.dyepig.2015.11.022

Cited by 15 publications

(23 citation statements)

References 36 publications

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“…It should be emphasized that the flow-coated films outperformed spin-coated films using CF or a mixed CF:high bp solvent, 27 which is because of their improved crystallinity and edge-on orientations. It is also interesting to note that the surface roughness of the flow-coated film was relatively lower than that of the spin-coated film while the film crystallinity increased in the flow-coating process, which would be …”

Section: Resultsmentioning

confidence: 99%

“…OTFTs based on PTTDPP-DT-DTT polymer were prepared and the electrical properties of OTFTs were measured as reported previously, 27 UV-visible absorption spectroscopy was performed on a Perkin Elmer Lambda 9 UV-VIS spectrophotometer. Grazing incidence X-ray diffraction (GIXD) experiments on the flow-coated polymer films were done at the Pohang Light Source II in Republic of Korea with the 0.1110 nm X-ray source.…”

Section: Methodsmentioning

confidence: 99%

“…5,[24][25] The interactions among the polymer chains may be modulated through the selection of the processing solvent and the use of a thermal annealing process. 17,[26][27][28] Solution-processed OTFT studies commonly use chloroform (CF) as the processing solvent and the spin-coating method as a very simple and popular method of generating the semiconducting polymer films.…”

Section: Introductionmentioning

confidence: 99%

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Low-Band-Gap Polymer-Based Ambipolar Transistors and Inverters Fabricated Using a Flow-Coating Method

et al. 2016

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The performances of organic thin film transistors (OTFTs) produced by polymer solution casting are tightly correlated with the morphology and chain-ordering of semiconducting polymer layers, which depends on the processing conditions applied. The slow evaporation of a high boiling point (bp) solvent permits sufficient time for the assembly of polymer chains during the process, resulting in improving the film crystallinity and inducing favorable polymer chain orientations for charge transport. The use of high bp solvents, however, often results in de-wetting of thin films formed on hydrophobic surfaces, such as the commonly used octadecyltrichlorosilane (ODTS)-treated SiO 2 gate dielectric. De-wetting hampers the formation of uniform and highly crystalline semiconducting active channel layers. In this manuscript, we demonstrated the formation of highly crystalline dithienothienyl diketopyrrolopyrrole (TT-DPP)-based polymer films using a flow-coating method to enable the fabrication of ambipolar transistors and inverters.Importantly, unlike conventional spin-coating methods, the flow-coating method allowed us to use high bp solvents, even on a hydrophobic surface, and minimized the polymer solution waste. The crystalline orientations of the TT-DPP-based polymers were tuned depending on the solvent used (four different bp solvents were tested) and the employment of a thermal annealing step. The use of high bp solvents and thermal annealing of the polymer films significantly enhanced the crystalline microstructures in the flowcoated films, resulting in considerable carrier mobility increase in the OTFTs compared to the spin-coated films. Our simple, inexpensive, and scalable flow-coating method, for the first time employed in printing semiconducting polymers, presents a significant step toward optimizing the electrical performances of organic ambipolar transistors through organic semiconducting layer film crystallinity engineering.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Low-Band-Gap Polymer-Based Ambipolar Transistors and Inverters Fabricated Using a Flow-Coating Method

et al. 2016

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“…[16][17][18] Considering that the thickness of channel layers in OFETs is usually in the range of ≈50 nm or less, a reasonable transparency can be made if electrodes are transparent (metal oxides) or semitransparent (metals). [23][24][25][26][27] Therefore, light-insensitive organic semiconducting materials are required to achieve real transparent OFETs without large disturbance by surrounding light. [23][24][25][26][27] Therefore, light-insensitive organic semiconducting materials are required to achieve real transparent OFETs without large disturbance by surrounding light.…”

Section: Light-insensitive Organic Field-effect Transistors With N-tymentioning

confidence: 99%

“…Considering that the thickness of channel layers in OFETs is usually in the range of ≈50 nm or less, a reasonable transparency can be made if electrodes are transparent (metal oxides) or semitransparent (metals) . However, there should be large fluctuations in drain current when the OFETs with the (semi)transparent electrodes are operated under daylight (or room light) condition because most organic semiconducting materials can absorb ultraviolet (UV) and/or visible (vis) light including near‐infrared (NIR) light in some cases . Therefore, light‐insensitive organic semiconducting materials are required to achieve real transparent OFETs without large disturbance by surrounding light.…”

Section: Introductionmentioning

confidence: 99%

Light‐Insensitive Organic Field‐Effect Transistors with n‐Type Conjugated Polymers Containing Dinitrothiophene Units

Moon

Lee

Kim

et al. 2018

Adv Elect Materials

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Here, it is reported that organic field‐effect transistors (OFETs) with n‐type conjugated polymer, poly[{2,5‐bis‐(2‐octhyldodecyl)‐3,6‐bis‐(thien‐2‐yl)‐pyrrolo[3,4‐c]pyrrole‐1,4‐diyl}‐co‐{2,2′‐(3,4‐dinitrothiophene)]‐5,5′‐diyl}] (PODTPPD‐DNT), can be operated without large disturbance by surrounding light. The PODTPPD‐DNT polymer synthesized via the Stille coupling reaction could act as a channel layer for n‐channel OFETs. Although the PODTPPD‐DNT polymer shows a broad optical absorption from ultraviolet to near‐infrared parts up to 1000 nm, the OFETs with the PODTPPD‐DNT channel layers do not almost respond to monochromatic (520 and 780 nm) and white light. The reason is assigned to the exciton quenching effect by two nitro groups in the polymer chain. The semitransparent OFETs with the 20 nm thick PODTPPD‐DNT channel layers are also almost light‐insensitive for operation under typical room light conditions.

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A rigid planar low band gap polymer PTTDPP-DT-DTT for heterojunction solar cell: a study of density functional theory

Wang

Song

et al. 2018

Theor Chem Acc

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A new rigid planar low band gap PTTDPP-DT-DTT polymer for organic transistors and performance improvement through the use of a binary solvent system

Cited by 15 publications

References 36 publications

Low-Band-Gap Polymer-Based Ambipolar Transistors and Inverters Fabricated Using a Flow-Coating Method

Low-Band-Gap Polymer-Based Ambipolar Transistors and Inverters Fabricated Using a Flow-Coating Method

Light‐Insensitive Organic Field‐Effect Transistors with n‐Type Conjugated Polymers Containing Dinitrothiophene Units

A rigid planar low band gap polymer PTTDPP-DT-DTT for heterojunction solar cell: a study of density functional theory

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