Biaxial Fracture Test of Silicon Wafers

Funke, Claudia; Kullig, E.; Kuna, Meinhard; Möller, Hans Joachim

doi:10.1002/adem.200400406

Cited by 53 publications

(34 citation statements)

References 3 publications

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“…Biaxial flexural tests on plates, which have been used to evaluate the strength of ceramics for more than 40 years in various configurations such as ball-on-ring, 111,112 uniform pressure, 113 ring-on-ring, 114 or piston-on-threeballs, 115 have been adapted to investigate the biaxial strain effects in UTCs. 116,117,150 Properties such as phonon or electronic deformation potentials 118,119 are measured through these tests to find the fracture strength 96,[120][121][122] or to investigate the 2D strain effects on the electrical behavior of MOSFETs. 123,124 In the case of thin samples, the fracture strength is influenced by the roughness and morphology of the surface, 125 which in turn are affected by the surface defects introduced through backside grinding, polishing, chemical etching, and edge defects caused by wafer sawing or dicing.…”

Section: B Biaxial Bending Of Utcsmentioning

confidence: 99%

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Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Heidari

Wacker

Dahiya

2017

Applied Physics Reviews

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Electronics that conform to 3D surfaces are attracting wider attention from both academia and industry. The research in the field has, thus far, focused primarily on showcasing the efficacy of various materials and fabrication methods for electronic/sensing devices on flexible substrates. As the device response changes are bound to change with stresses induced by bending, the next step will be to develop the capacity to predict the response of flexible systems under various bending conditions. This paper comprehensively reviews the effects of bending on the response of devices on ultra-thin chips in terms of variations in electrical parameters such as mobility, threshold voltage, and device performance (static and dynamic). The discussion also includes variations in the device response due to crystal orientation, applied mechanics, band structure, and fabrication processes. Further, strategies for compensating or minimizing these bending-induced variations have been presented. Following the in-depth analysis, this paper proposes new mathematical relations to simulate and predict the device response under various bending conditions. These mathematical relations have also been used to develop new compact models that have been verified by comparing simulation results with the experimental values reported in the recent literature. These advances will enable next generation computer-aided-design tools to meet the future design needs in flexible electronics.

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Section: B Biaxial Bending Of Utcsmentioning

confidence: 99%

“…For small deflections, these stresses are expressed analytically, 68,69 and for large deflections (larger than the thickness of the Si-plate), they are usually determined by non-linear FEM calculations. 120 Some examples are presented below.…”

Section: B Biaxial Bending Of Utcsmentioning

confidence: 99%

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Heidari

Wacker

Dahiya

2017

Applied Physics Reviews

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“…For the past few decades, fracture properties of silicon have been studied extensively by researchers from both the electronics and PV industries (Pérez and Gumbsch 2000;Robers 1997;Behnken et al 2003;Funke et al 2004;Möller et al 2005;Park et al 2005;Rupnowski and Sopori 2007;Wormsen and Härkegård 2004;Ebrahimi and Kalwani 1999;Bohm et al 2004b;Hauck et al 2005). Most of the data are available for single-crystal silicon.…”

mentioning

confidence: 97%

“…Fracture strength of multicrystalline PV silicon wafers is very often verified by solar cell manufacturers, and the experimentally obtained strength data are available in the literature (Funke et al 2004;Möller et al 2005;Coletti et al 2005). Due to the brittle nature of the material, its strength can vary significantly from specimen to specimen; therefore, statistical methods are always employed to present the strength data for PV silicon wafers.…”

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confidence: 98%

Strength of silicon wafers: fracture mechanics approach

Rupnowski

Sopori

2009

Int J Fract

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This paper describes a model to predict mechanical strength distribution of silicon wafers. A generalized expression, based on a multimodal Weibull distribution, is proposed to describe the strength of a brittle material with surface, edge, and bulk flaws. The specific case of a cast, unpolished photovoltaic (PV) wafer is further analyzed. Assuming that surface microcracks constitute the dominant mechanism of wafer breakage, this model predicts the strength distribution of PV silicon that matches well the experimental results available in the literature.

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“…[9][10][11][12] In comparison, our current understanding of solar cell breakage and strength behavior is rudimentary. The strength of wafers and cells is widely evaluated via bending tests and Weibull statistics, 13 using a continuum approach [14][15][16][17] that assumes spatially-invariant ͑homogeneous͒ material properties. Hence, the strength of wafers can be described by statistical parameters, but often the cause of breakage cannot be determined.…”

Section: Introductionmentioning

confidence: 99%

Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

Ganapati

Schoenfelder

Castellanos

et al. 2010

Journal of Applied Physics

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This manuscript concerns the application of infrared birefringence imaging ͑IBI͒ to quantify macroscopic and microscopic internal stresses in multicrystalline silicon ͑mc-Si͒ solar cell materials. We review progress to date, and advance four closely related topics. ͑1͒ We present a method to decouple macroscopic thermally-induced residual stresses and microscopic bulk defect related stresses. In contrast to previous reports, thermally-induced residual stresses in wafer-sized samples are generally found to be less than 5 MPa, while defect-related stresses can be several times larger. ͑2͒ We describe the unique IR birefringence signatures, including stress magnitudes and directions, of common microdefects in mc-Si solar cell materials including: ␤-SiC and ␤-Si 3 N 4 microdefects, twin bands, nontwin grain boundaries, and dislocation bands. In certain defects, local stresses up to 40 MPa can be present. ͑3͒ We relate observed stresses to other topics of interest in solar cell manufacturing, including transition metal precipitation, wafer mechanical strength, and minority carrier lifetime. ͑4͒ We discuss the potential of IBI as a quality-control technique in industrial solar cell manufacturing.

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Biaxial Fracture Test of Silicon Wafers

Cited by 53 publications

References 3 publications

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Strength of silicon wafers: fracture mechanics approach

Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

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