Biaxial CdTe/CaF2 films growth on amorphous surface

Yuan, Wentao; Tang, Fu; Li, H.-F.; Parker, Thomas C.; LiCausi, Nicholas; Lu, Toh‐Ming; Bhat, Ishwara B.; Wang, G.-C.; Lee, S.

doi:10.1016/j.tsf.2009.04.052

Cited by 20 publications

(18 citation statements)

References 26 publications

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“…High T c superconductor tapes are now commercially available. CdTe semiconductor has been grown heteroepitaxially on biaxial CaF 2 buffer layers on glass [8]. In this article we report a heteroepitaxial growth of biaxially textured Ge film on glass substrate with biaxially textured CaF 2 as a buffer layer.…”

Section: Introductionmentioning

confidence: 99%

Small angle grain boundary Ge films on biaxial CaF2/glass substrate

Gaire

Clemmer

et al. 2010

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Small angle grain boundary Ge films on biaxial CaF2/glass substrate

Gaire

Clemmer

et al. 2010

Journal of Crystal Growth

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“…Our previous work shows that CaF 2 nanorods grown by the oblique angle vapor deposition on amorphous substrates exhibit a biaxial texture [35,36]. This CaF 2 can be used as a buffer layer to grow biaxial thin films for various applications [6,7,9,10]. In Fig.…”

Section: Texture Evolution Of Caf 2 Nanorods -A Rheed Surface Pole Fimentioning

confidence: 97%

“…All these films were deposited using the oblique angle deposition (or inclined-substrate deposition) technique [37][38][39][40][41][42][43]. We have also applied the technique to measure the CdTe biaxial films grown on biaxial CaF 2 nanostructures deposited using the oblique angle deposition technique [9,10]. Oblique-angle deposition has been used to grow magnetic films with magnetic anisotropy [44], high reflectance mirrors for optics [37], and various nanostructures [38, 39, 41-43, 45, 46].…”

Section: Oblique Angle Deposition -A Strategy For Film Growth With Bimentioning

confidence: 99%

“…A recent example is the growth of biaxially textured films as buffer layers for subsequent growth of highly oriented (both out-of-plane and in-plane) high T c superconducting films to achieve high current density [5]. It has also been suggested that this approach can be extended to include the growth of biaxial semiconductor films on biaxially textured buffer layers on glass [6][7][8], amorphous substrates [9,10] and metal sheets [11,12] for efficient and inexpensive solar cell applications. Other potential applications include solid state lighting and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

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RHEED Pole Figure Measurements of Biaxial Thin Film Growth Front Evolution

et al. 2011

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The most frequently used characterization technique for biaxial texture formation in thin films is x-ray pole figure analysis. However, x-rays interact weakly with matter and can penetrate a few microns deep into the film. The texture obtained by x-rays is therefore an average texture from the entire thickness of the film. As the texture of a film often changes during growth, information on the basic mechanisms that control the final texture is often lost. In contrast electrons interact strongly with matter and they have very limited penetration and escape depths of a few nm. In this paper we will show how we can use our newly developed reflection high energy electron diffraction (RHEED) surface pole figure technique to probe the surface texture evolution of the growth front from the initial stage (nm thick) to the later stage. The RHEED pole figure technique is a surface-sensitive technique that allows us to obtain information on the dynamic behavior of texture evolution of the growth front during film deposition. We shall explain the principle, measurement, and construction of such RHEED surface pole figures. An example of the biaxial texture evolution of CaF 2 due to the atomic shadowing effect during oblique angle deposition is described.

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“…Recently there has been considerable effort to produce biaxially oriented, quasi-single crystal semiconductor films on glass or polycrystalline metal sheets through a biaxially oriented buffer layer [6][7][8][9][10][11][12][13][14][15]. Biaxial texture, a preferred crystallographic orientation in both in-and out-of-plane directions possesses small angle misorientations between the adjacent grains and may lead to less recombination and hence should improve the electrical properties of the semiconductor films [11][12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%