Bias Stress and Memory Effect in Pentacene-based Organic Thin-Film Transistors with a Fullerene Layer

Mohamad, Khairul Anuar; Yamada, Shinya; Uesugi, Katsuhiro; Fukuda, Hisashi

doi:10.1380/ejssnt.2009.808

Cited by 2 publications

(2 citation statements)

References 14 publications

(21 reference statements)

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“…[21][22][23] In comparing the memory performance between n-and p-type organic transistors, it can be seen that there is a hole trapping effect in the P3HT layer from the P(NDI2OD-T2) channel as compared with electron trapping in the PCBM layer from the pentacene channel. As the schematic illustration in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The proposed operating mechanism for n-channel-type organic transistor memory using a hole-acceptor organic film as the charge storage layer can be explained as being similar to that of p-channel-type organic transistor memory with an electron-acceptor layer, which was reported earlier. [21][22][23] In comparing the memory performance between n-and p-type organic transistors, it can be seen that there is a hole trapping effect in the P3HT layer from the P(NDI2OD-T2) channel as compared with electron trapping in the PCBM layer from the pentacene channel. As the schematic illustration in Fig.…”

Section: Otftsmentioning

confidence: 99%

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n-Channel Organic Thin-Film Transistors based on Naphthalene–Bis(dicarboximide) Polymer for Organic Transistor Memory Using Hole-Acceptor Layer

Mohamad

Yousuke

Uesugi

et al. 2011

Jpn. J. Appl. Phys.

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An investigation of threshold voltage shifts in organic thin-film transistors (OTFTs) based on poly{[N,N 0 -bis(2-octyldodecyl)-naphthalene-1,4,5,8bis(dicarboximide)-2,6-diyl]-alt-5,5 0 -(2,2 0 -bithiophene)} [P(NDI2OD-T2)] with additional poly(3-hexylthiophene) (P3HT) films on a poly(methyl methacrylate) (PMMA) organic dielectric layer is reported. With a top source-drain contact structure, the device exhibited a unipolar property with n-channel characteristics similar to those of the P(NDI2OD-T2)-only device. Furthermore, the existence of P3HT films as hole acceptor-like storage layers resulted in reversible V th shift upon the application of external gate bias (V bias ) for a certain bias time (T bias ). Hence, the P(NDI2OD-T2)/P3HT-OTFTs exhibited a large memory window (ÁV th ¼ 10:7 V) for write and erase electrically without major degradation in saturation mobility [ sat ¼ ð1:8{2:8Þ Â 10 À4 cm 2 V À1 s À1 ]. These results clearly indicate the utility of the naphthalene-bis(dicarboximide) (NDI)-based polymer-hole acceptor layer in the development of n-channel organic transistor memories. #

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Section: Resultsmentioning

confidence: 99%

Section: Otftsmentioning

confidence: 99%

n-Channel Organic Thin-Film Transistors based on Naphthalene–Bis(dicarboximide) Polymer for Organic Transistor Memory Using Hole-Acceptor Layer

Mohamad

Yousuke

Uesugi

et al. 2011

Jpn. J. Appl. Phys.

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n-Channel Organic Thin-Film Transistors based on Naphthalene–Bis(dicarboximide) Polymer for Organic Transistor Memory Using Hole-Acceptor Layer

Mohamad¹,

Yousuke²,

Uesugi³

et al. 2011

Jpn. J. Appl. Phys.

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Undoubtedly, gadgets are devices for communication, entertainment and education as well for younger children. Children play with gadgets sitting or lying down at home and worse of all, apart from lacking in physical activity, they only communicate with the apps screen rather than with their parents. Besides parents, teachers are crucial in nurturing preschoolers during the early stage of their development. As a result, the current qualitative study interviewed 14 teachers to perceive their knowledge in gadget usage, sedentary behaviour and social skills among preschoolers. Besides that, teaching methods were also uncovered to understand how the teachers enhance the social skills of preschoolers and reduce their sedentary behaviour. Inductive Analysis (IA) revealed that most teachers reported that, "Parents always give their mobile phones" to the preschoolers and interestingly, the preschoolers said, "Tell the teachers that they are playing gadgets at home." Moreover, some of the teachers reported that gadgets are not safe for preschoolers if too much time is spent on them. As predicted, all the teachers were apparently unaware of the detriment of gadget usage on sedentary behaviour and social skills, especially for four-year-old children as most of them were quiet in preschool. The teachers' attitude and habit were found to be moderate in lesson planning and improving the social skills of preschoolers but minimal for addressing their sedentary behaviour.

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Bias Stress and Memory Effect in Pentacene-based Organic Thin-Film Transistors with a Fullerene Layer

Cited by 2 publications

References 14 publications

n-Channel Organic Thin-Film Transistors based on Naphthalene–Bis(dicarboximide) Polymer for Organic Transistor Memory Using Hole-Acceptor Layer

n-Channel Organic Thin-Film Transistors based on Naphthalene–Bis(dicarboximide) Polymer for Organic Transistor Memory Using Hole-Acceptor Layer

n-Channel Organic Thin-Film Transistors based on Naphthalene–Bis(dicarboximide) Polymer for Organic Transistor Memory Using Hole-Acceptor Layer

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