n-Channel Organic Thin-Film Transistors based on Naphthalene–Bis(dicarboximide) Polymer for Organic Transistor Memory Using Hole-Acceptor Layer

Abstract

Undoubtedly, gadgets are devices for communication, entertainment and education as well for younger children. Children play with gadgets sitting or lying down at home and worse of all, apart from lacking in physical activity, they only communicate with the apps screen rather than with their parents. Besides parents, teachers are crucial in nurturing preschoolers during the early stage of their development. As a result, the current qualitative study interviewed 14 teachers to perceive their knowledge in gadget usage, sedentary behaviour and social skills among preschoolers. Besides that, teaching methods were also uncovered to understand how the teachers enhance the social skills of preschoolers and reduce their sedentary behaviour. Inductive Analysis (IA) revealed that most teachers reported that, "Parents always give their mobile phones" to the preschoolers and interestingly, the preschoolers said, "Tell the teachers that they are playing gadgets at home." Moreover, some of the teachers reported that gadgets are not safe for preschoolers if too much time is spent on them. As predicted, all the teachers were apparently unaware of the detriment of gadget usage on sedentary behaviour and social skills, especially for four-year-old children as most of them were quiet in preschool. The teachers' attitude and habit were found to be moderate in lesson planning and improving the social skills of preschoolers but minimal for addressing their sedentary behaviour.

Vapor-deposition of naphthalene diimide derivatives and interface control between aluminum cathode

“…However, these compounds tend to have low solubility in organic solvents, which makes the wet-coating of these materials difficult. Owing to the low solubility, their application to polymer materials are also limited only to naphthaleneimide moieties 7,8) except for a few cases of peryleneimide polymers prepared by vapor deposition-polymerization. 9) In this work, we explore electron-only devices (EODs) by vapor deposition of newly synthesized naphthalenediimide (NDI) derivatives.…”

Polythiophene-based materials for nonvolatile polymeric memory devices

“…Therefore, the memory operation could be interpreted in terms of writing, storing, repeated reading and erasing. Kaneto et al demonstrated OFET devices based on P3HT, a metal floating gate of Al or Ca, and a polyimide (PI) insulator film, which memory effects were also induced by light illumination in the cell having the floating gate with a decay time in the range of 1500 to 2500 s. Mohamad et al researched OTFT memory devices based on poly{[ N , N′‐bis (2‐octyldodecyl)‐naphthalene‐1,4,5,8‐ bis (dicarboximide)−2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} [P(NDI2OD‐T2)] n with additional P3HT films on a poly(methyl methacrylate) (PMMA) organic dielectric layer. In this case, P3HT films played a role as hole acceptor‐like storage layers resulted in reversible V th shift upon the application of external gate bias ( V bias ).…”

Organic nonvolatile memory devices utilizing intrinsic charge-trapping phenomena in an n-type polymer semiconductor

“…[19] This memory device could be programmed at 50 V for 0. , has also been used in OFET memory devices; however, the device performance improved significantly only after using an additional poly(3-hexylthiophene) (P3HT) film on a poly(methylmethacrylate) (PMMA) dielectric layer for trapping charges. [22] OFET memory devices without any additional charge-trapping components do not have sufficient amount of charge trapping for two stable memory states. This low chargetrapping capability decreases the device performance and limits the commercial viability of OFET memory devices.…”