2014
DOI: 10.1063/1.4866784
|View full text |Cite
|
Sign up to set email alerts
|

Bias current dependence of the spin lifetime in insulating Al0.3Ga0.7As

Abstract: The spin lifetime and Hanle signal amplitude dependence on bias current has been investigated in insulating Al 0.3 Ga 0.7 As:Si using a three-terminal Hanle effect geometry. The amplitudes of the Hanle signals are much larger for forward bias than for reverse bias, although the spin lifetimes found are statistically equivalent. The spin resistancearea product shows a strong increase with bias current for reverse bias and small forward bias until 150 A, beyond which a weak dependence is observed. The spin life… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2014
2014
2022
2022

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(1 citation statement)
references
References 30 publications
0
1
0
Order By: Relevance
“…Carrier spin injection into a semiconductor (SC) is the first necessary condition to introduce spin degree of freedom into traditional electronics. Spin injection was demonstrated in Si [11,12], Ge [13,14], GaAs [15,16] and other semiconductors [17,18] with various doping levels and types using different ferromagnetic materials as injectors and dielectric films as tunneling barriers. Large scientific interest is paid to spin injectors based on ferromagnetic (FM) Heusler alloys with high spin polarization, like Fe 3 Si, Co 2 FeSi, Fe 2 MnSi, Co 2 FeAl, since they can be epitaxially grown on various semiconducting substrates [19][20][21][22][23][24].…”
Section: Introductionmentioning
confidence: 99%
“…Carrier spin injection into a semiconductor (SC) is the first necessary condition to introduce spin degree of freedom into traditional electronics. Spin injection was demonstrated in Si [11,12], Ge [13,14], GaAs [15,16] and other semiconductors [17,18] with various doping levels and types using different ferromagnetic materials as injectors and dielectric films as tunneling barriers. Large scientific interest is paid to spin injectors based on ferromagnetic (FM) Heusler alloys with high spin polarization, like Fe 3 Si, Co 2 FeSi, Fe 2 MnSi, Co 2 FeAl, since they can be epitaxially grown on various semiconducting substrates [19][20][21][22][23][24].…”
Section: Introductionmentioning
confidence: 99%