Bias current dependence of the spin lifetime in insulating Al0.3Ga0.7As

Abstract

The spin lifetime and Hanle signal amplitude dependence on bias current has been investigated in insulating Al 0.3 Ga 0.7 As:Si using a three-terminal Hanle effect geometry. The amplitudes of the Hanle signals are much larger for forward bias than for reverse bias, although the spin lifetimes found are statistically equivalent. The spin resistancearea product shows a strong increase with bias current for reverse bias and small forward bias until 150 A, beyond which a weak dependence is observed. The spin lifetimes diminish substantially with increasing bias current. The dependence of the spin accumulation and lifetime diminish only moderately with temperature from 5 K to 30 K.

Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure

“…Carrier spin injection into a semiconductor (SC) is the first necessary condition to introduce spin degree of freedom into traditional electronics. Spin injection was demonstrated in Si [11,12], Ge [13,14], GaAs [15,16] and other semiconductors [17,18] with various doping levels and types using different ferromagnetic materials as injectors and dielectric films as tunneling barriers. Large scientific interest is paid to spin injectors based on ferromagnetic (FM) Heusler alloys with high spin polarization, like Fe 3 Si, Co 2 FeSi, Fe 2 MnSi, Co 2 FeAl, since they can be epitaxially grown on various semiconducting substrates [19][20][21][22][23][24].…”