Shape of the Hanle curve in spin-transport structures in the presence of an ac drive

Roundy, R. C.; Prestgard, M. C.; Tiwari, Ashutosh; Raǐkh, M. É.

doi:10.1103/physrevb.90.205203

Cited by 4 publications

(4 citation statements)

References 49 publications

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“…We will demonstrate that the shapes of the transport Hanle curves in TMDs depend dramatically on the ratio of γ v to the SO splitting of the electron spectrum, Ω SO , and that these shapes are different from the conventional transport Hanle curves. In this regard, we emphasize, that the shapes of the Hanle curves reported for wide variety of materials are very robust 35 . Specifics of the Hanle curves in TMDs is due to the valley asymmetry.…”

Section: Introductionmentioning

confidence: 70%

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Spin transport inn-type single-layer transition-metal dichalcogenides

et al. 2016

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Valley asymmetry of the electron spectrum in transition metal dichalcogenides (TMDs) originates from the spin-orbit coupling. Presence of spin-orbit fields of opposite signs for electrons in K and K valleys in combination with possibility of intervalley scattering result in a nontrivial spin dynamics. This dynamics is reflected in the dependence of nonlocal resistance on external magnetic field (the Hanle curve). We calculate theoretically the Hanle shape in TMDs. It appears that, unlike conventional materials without valley asymmetry, the Hanle shape in TMDs is different for normal and parallel orientations of the external field. For normal orientation, it has two peaks for slow intervalley scattering, while for fast intervalley scattering, the shape is usual. For parallel orientation, the Hanle curve exhibits a cusp at zero field. This cusp is a signature of a slow-decaying valley-asymmetric mode of the spin dynamics.

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Section: Introductionmentioning

confidence: 70%

“…In this regard, we emphasize, that the shapes of the Hanle curves reported for wide variety of materials are very robust. 35 Specifics of the Hanle curves in TMDs is due to the valley asymmetry.…”

Section: 33mentioning

confidence: 99%

Spin transport inn-type single-layer transition-metal dichalcogenides

et al. 2016

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“…With regard to our present experimental study, the opposite limit d λ s is relevant. Physically, in this limit, the Hanle curve is expected to exhibit numerous oscillations due to the fact that the spin of injected electron can accomplish integer number of full precessions before it reaches the detector [47].…”

Section: Theorymentioning

confidence: 99%

“…In the theory of the Hanle effect [36,37,[46][47][48], the nonlocal resistance, R(ω z L ), is related to the spin density, S x (t), as follows…”

Section: Theorymentioning

confidence: 99%

Signature of Hanle precession in trilayer MoS2 : Theory and experiment

et al. 2017

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Valley-spin coupling in transition-metal dichalcogenides (TMDs) can result in unusual spin transport behaviors under an external magnetic field. Nonlocal resistance measured from 2D materials such as TMDs via electrical Hanle experiments are predicted to exhibit nontrivial features, compared with results from conventional materials due to the presence of intervalley scattering as well as a strong internal spin-orbit field. Here, for the first time, we report the all-electrical injection and non-local detection of spin polarized carriers in trilayer MoS2 films. We calculate the Hanle curves theoretically when the separation between spin injector and detector is much larger than spin diffusion length, λs. The experimentally observed curve matches the theoretically-predicted Hanle shape under the regime of slow intervalley scattering. The estimated spin life-time was found to be around 110 ps at 30 K.

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Temperature dependence of the spin relaxation in highly degenerate ZnO thin films

Prestgard

Siegel

Roundy

et al. 2015

Journal of Applied Physics

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Zinc oxide is a wide-bandgap semiconductor which is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be practically achieved, a thorough, scientific understanding of the various spin transport and relaxation processes undergone in this material is essential. In the present paper we report our investigations into these processes via temperature dependent, non-local Hanle experiments.Epitaxial ZnO thin films were deposited on c-axis sapphire substrates using a pulsed laser deposition technique. Careful structural, optical, and electrical characterizations of the films were performed. Temperature dependent Hanle measurements were carried out, using an all-electrical scheme for spin injection and detection, in a non-local geometry over the temperature range of 20 -300 K. Carrier concentration in these films, as determined by Hall effect measurements, was found to be of the order of 10 19 cm -3 . It was determined that in such a degenerately doped system it is essential to use Fermi-Dirac statistics to explain the transport of carriers in the system. From the Hanle data, spin relaxation time in the ZnO films was determined at different temperatures.Our analysis of the temperature-dependent spin relaxation time data suggests that the dominant mechanism of spin relaxation in ZnO films is the Dyakonov-Perel (DP) mechanism modified for the wurtzite crystalline structure in which a hexagonal c-axis reflection asymmetry is present. As a result of this modification the spin-relaxation rate is linear-in-momentum.

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Shape of the Hanle curve in spin-transport structures in the presence of an ac drive

Cited by 4 publications

References 49 publications

Spin transport inn-type single-layer transition-metal dichalcogenides

Spin transport inn-type single-layer transition-metal dichalcogenides

Signature of Hanle precession in trilayer MoS2 : Theory and experiment

Temperature dependence of the spin relaxation in highly degenerate ZnO thin films

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