Benefitting from High-κ Spacer Engineering in Balistic Triple-Gate Junctionless FinFET- a Full Quantum Study

Bousari, Nazanin Baghban; Anvarifard, Mohammad K.; Haji-Nasiri, Saeed

doi:10.1007/s12633-019-00318-y

Cited by 17 publications

(3 citation statements)

References 28 publications

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“…Others have also studied nanowire FETs of various types [251] and FinFETs [252], as well as various tunneling structures [253]. Strong simulation packages using full band structure and NEGF for transport have appeared for FETs over the years [254,255].…”

Section: Nonequilibrium Green's Functionsmentioning

confidence: 99%

A review of quantum transport in field-effect transistors

Ferry

Weinbub

Nedjalkov

et al. 2022

Semicond. Sci. Technol.

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Confinement in small structures has required quantum mechanics, which has been known for a great many years. This leads to quantum transport. The field-effect transistor has had no need to be described by quantum transport over most of the century for which it has existed. But, this has changed in the past few decades, as modern versions tend to be absolutely controlled by quantum confinement and the resulting modifications to the normal classical descriptions. In addition, correlation and confinement lead to a need for describing the transport by quantum methods as well. In this review, we describe the quantum effects and the method of treating by various approaches to quantum transport.

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Section: Nonequilibrium Green's Functionsmentioning

confidence: 99%

A review of quantum transport in field-effect transistors

Ferry

Weinbub

Nedjalkov

et al. 2022

Semicond. Sci. Technol.

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“…is highlighted through cascading two NC materials such as a FE layer and an air gap instead of gate dielectric material 11 . The performance of a high‐k spacer junctionless FinFET (HKS JL FinFET) is compared with junctionless FinFET through a simulation study 12 . The HfO 2 spacer is considered near source and drain regions; the drain region spacer is extended in the channel.…”

Section: Introductionmentioning

confidence: 99%

Study on impact of ferroelectric layer thickness on RF /analog and linearity parameters in ferroelectric‐FinFET

Saha

Bhowmick

Baishya

2021

Int J RF Mic Comp-Aid Eng

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In this paper, we systematically investigated the effect of ferroelectric (FE) layer thickness (t FE ) on transfer and RF/analog characteristics such as transconductance (g m ), total gate capacitance (C gg ), cut off frequency (f t ), transconductance frequency product, and unilateral power gain in Ferroelectric-FinFET (Fe-FinFET) through 3D TCAD simulator. Further, we highlighted the influence of t FE on linearity figure of merits (FoMs), higher order harmonics (g m2 and g m3 ), voltage intercept points (VIP 2 and VIP 3 ), third order power intercept point (IIP 3 ), third order intermodulation distortion (IMD 3 ), and 1-dB compression point (1-dB comp. Pnt.) for Fe-FinFET. Moreover, the harmonic distortion (HD) parameters like second and third order harmonic distortion (HD2 and HD3) and total harmonic distortion (THD) are reported taking t FE as a parameter. The noise spectral densities of Fe-FinFET taking t FE as parameter is also highlighted. The scaling of t FE has a significant impact on RF/analog parameters and these RF/analog FoMs are a function of t FE . It is also perceived that linearity and HD parameters are dependent on scaling of t FE . Results reveal that with increase in t FE , RF/analog characteristics degrades, whereas, superior linearity FoMs is achieved. It is also seen that HD parameters are improved with increased in t FE value. The increased in t FE leads to increase in noise spectral densities. Finally, the comparative study of electrical parameters of this work with the existing literature is investigated.

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“…The gate oxide thickness (t ox = 0.4 nm) has improved ON current and transconductance, whereas, at t ox = 1 nm maximum cut off frequency is obtained for a 3 nm truncated fin FinFET 19 . The electrical parameters of a high‐k spacer triple gate junctionless FinFET (HKS TG JL FinFET) is analyzed through 3D simulation and it has higher leakage current, I ON /I OFF ratio with degraded intrinsic gain compared to conventional JL FinFET 20 …”

Section: Introductionmentioning

confidence: 99%

Influence of dielectric material near tunnel junction on analog/ RF and linearity figure of merits in hetero dielectric ( HG ) TFET : A detailed study

Saha

Sahu

2021

Int J RF Microw Comput Aided Eng

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In this work, the effect of dielectric material near the source region on analog/RF and linearity figure of merits in hetero gate TFET (HG‐TFET) are investigated through Technology Computer Aided Design device simulator. The various dielectric materials considered in this study are SiO2, Al2O3, and HfO2. The several RF/analog metrics studied in this work are transconductance (gm), output conductance (gd), gain (gm/gd), gate capacitance, cut‐off frequency, and gain frequency product. Furthermore, the various linearity parameters discussed are higher order derivative of gm (gm2 and gm3), voltage intercept points (VIP2 and VIP3), 3rd‐order input intercept power, and 3rd‐order intermodulation power for different high‐k dielectric near the source region in HG‐TFET. Results reveal that RF/analog performance is improved, whereas, the linearity characteristic is suppressed in HG‐TFET using HfO2 as the gate dielectric near the source.

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Benefitting from High-κ Spacer Engineering in Balistic Triple-Gate Junctionless FinFET- a Full Quantum Study

Cited by 17 publications

References 28 publications

A review of quantum transport in field-effect transistors

A review of quantum transport in field-effect transistors

Study on impact of ferroelectric layer thickness on RF /analog and linearity parameters in ferroelectric‐FinFET

Influence of dielectric material near tunnel junction on analog/ RF and linearity figure of merits in hetero dielectric ( HG ) TFET : A detailed study

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