Bending strength and flexibility of ZnO nanowires

Chen, C. Q.; Zhu, Jia‐Lin

doi:10.1063/1.2432289

Cited by 74 publications

(84 citation statements)

References 22 publications

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“…(1b), yielding a correlation factor (R 2 ) close to 1, as were the values of e FS in ZnO NWs measured via in situ free-end bending. 3 In addition, the transverse intercept of the fitting curve was larger for bending (e 0 ¼ 0.058) than for tension (e 0 ¼ 0.043), manifesting the effect of the loading mode that has been well understood in bulk specimens. 2 In contrast, the conventional size-dependent statistics [Eq.…”

Section: Resultsmentioning

confidence: 99%

“…15 The remarkable scattering of e FS can thus be attributed to the size distribution of critical defects, and their size effect results from the reduction of critical defects with decreasing D, which is in accordance with previous qualitative reports. [3][4][5][6][7][8] Concerning critical defects, Weibull statistical analysis is promising for revealing their size and spatial distribution a)…”

Section: Resultsmentioning

confidence: 99%

“…As depicted by the Weibull statistics, 2 the expected r FS of specimens increase as their characteristic sizes decrease, a condition known as size effect, which has been the core issue of fracture mechanics since Griffith. 1 Recently, increasing attention paid to the mechanical properties in nanowires (NWs) [3][4][5][6][7][8] and nanotubes (NTs) [9][10][11] is extending the size effect into the nanoscale. Although the defect-dominated r FS in NTs have been well understood based on Griffith's theory 10 and atomistic simulations, 11 for NWs, there were merely some preliminary experimental results on the size effect of r FS .…”

Section: Introductionmentioning

confidence: 99%

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Quantifying the defect-dominated size effect of fracture strain in single crystalline ZnO nanowires

Xiao

Zhao

et al. 2011

Journal of Applied Physics

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The diameter (D) dependence of fracture strains in [0001]-oriented single crystalline ZnO nanowires (NWs) with D ranging from 18 to 114 nm is experimentally revealed via in situ uniaxial tension and is well understood based on an analytical model developed by combining molecular dynamics simulations with fracture mechanics theories. We show that the scattered fracture strains are dominated by the effective quantities of atomic vacancies, and their lower bound follows a power-form scaling law, resembling the Griffith-type behavior of single critical defects with diameter-dependent sizes, when D is larger than a critical D C . In addition, theoretical strength is expected in NWs with D < D C . Our studies provide a simple, but basic, understanding for the size effect of strengths in single crystalline NWs.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Quantifying the defect-dominated size effect of fracture strain in single crystalline ZnO nanowires

Xiao

Zhao

et al. 2011

Journal of Applied Physics

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“…9͒ and yield strength S y = 7.0 GPa. 18 Using the classification of nanorods/nanowires as long, intermediate, end conditions, and the analysis models in Refs. 13 and 22 the modulus of elasticity, critical stress, critical strain, and strain energy are calculated and are given in Tables I-IV, respectively.…”

Section: End Condition Of Nanorodsmentioning

confidence: 99%

Bending flexibility, kinking, and buckling characterization of ZnO nanorods/nanowires grown on different substrates by high and low temperature methods

Riaz

Fulati

Yang

et al. 2008

Journal of Applied Physics

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Nanomechanical tests of bending flexibility, kinking, and buckling failure characterization of vertically aligned single crystal ZnO nanorods/nanowires were performed quantitatively by nanoindentation technique. These nanostructures were grown by the vapor liquid solid ͑VLS͒ method, a relatively high temperature approach, and the aqueous chemical growth ͑ACG͒ method, a relatively low temperature approach on different substrates, including SiC and Si. The first critical load at the inflection point found for the ZnO nanorods/nanowires grown by ACG method was 105 N on the SiC substrates and 114 N on the Si substrates. The corresponding buckling energies calculated from the force-displacement curves were 3.15ϫ 10 −12 and 2.337ϫ 10 −12 J, respectively. Similarly, for the samples grown by the VLS method, the first critical load at the inflection point and the corresponding buckling energies were calculated from the force-displacement curves as 198 N and 7.03ϫ 10 −12 J on the SiC substrates, and 19 N and 1.805ϫ 10 −13 J on the Si substrates. Moreover, the critical buckling stress, strain, and strain energy were also calculated for all samples. The strain energy for all samples was much less than the corresponding buckling energy. This shows that our as-grown samples are elastic and flexible. The elasticity measurement was performed for all the samples before reaching the first critical and kinking inflection point, and we subsequently observed the bending flexibility, kinking, and buckling phenomena on the same nanorods/nanowires. We observed that the loading and unloading behaviors during the bending test of the as-grown samples were highly symmetrical, and also that the highest point on the bending curves and the first inflection and critical point were very close. ZnO nanorods/nanowires grown on SiC by the ACG method, and those grown by the VLS method on Si substrates, show a linear relation and high modulus of elasticity for the force and displacement up to the first inflection and critical point. The results also show that the elasticity of the ZnO single crystal is approximately linear up to the first inflection point, is independent of the growth method and is strongly dependent on the verticality on the surface of the substrates. In addition, the results show that after the first buckling point, the nanorods/nanowires have plasticity, and become more flexible to produce multiple kinks.

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“…However, the fabrication of high quality, low resistivity and reproducible p-type ZnO has not yet been achieved. Hence the fabrication of stable ZnO p-n homo-junction based LEDs remains an unaccomplished goal [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

The effect of the interlayer design on the electroluminescence and electrical properties of n-ZnO nanorod/p-type blended polymer hybrid light emitting diodes

2009

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Hybrid light emitting diodes (LEDs) based on n-ZnO nanorods and blended polymers were fabricated and characterized. The blended polymers consisted of a blue emitting polymer and a charge transport polymer. The effect of the interlayer design on the electrical and electroluminescent characteristics of these hybrid LEDs was investigated. We demonstrated that by adding a Calcium (2) acetylacetonate [Ca(acac) 2 ] layer between the blended polymer layer and the ZnO nanorods, an increase in device performance was observed. The purpose of the extra layer was to act as a band offset stepping layer (offset divider). Moreover, the effect of the stepper layer thickness for this offset stepping layer was studied. The results indicate that LED performance is greatly affected by the presence and thickness of this band offset stepping layer.

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Bending strength and flexibility of ZnO nanowires

Cited by 74 publications

References 22 publications

Quantifying the defect-dominated size effect of fracture strain in single crystalline ZnO nanowires

Quantifying the defect-dominated size effect of fracture strain in single crystalline ZnO nanowires

Bending flexibility, kinking, and buckling characterization of ZnO nanorods/nanowires grown on different substrates by high and low temperature methods

The effect of the interlayer design on the electroluminescence and electrical properties of n-ZnO nanorod/p-type blended polymer hybrid light emitting diodes

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