Bendability of single-crystal Si MOSFETs investigated on flexible substrate

Li, H.Y.; Li, Guo; Loh, Wei‐Yip; Bera, L. K.; Zhang, Q.X.; Hwang, Nam; Liao, E.B.; Teoh, K.W.; Chua, Hongyao; Shen, Zexiang; Cheng, Changqing; Lo, G. Q.; Balasubramanian, N.; Kwong, Dim‐Lee

doi:10.1109/led.2006.876301

Cited by 23 publications

(10 citation statements)

References 16 publications

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“…In recent years, there have been novel approaches for transferring entire devices that have been fully fabricated on rigid substrates at high temperature to flexible substrates. Several clever methodologies such as chemical/mechanical thinning of the wafer, epitaxial layer transfer, and stress‐controlled exfoliation have been explored to achieve mechanical flexibility, high performance, nanoscale features, nanoscale alignment, and multi‐functionality. Although these works have shed a positive light on high‐performance flexible electronics, including static random access memory (SRAM) on flexible substrates, major issues such as the sophisticated process, limited applicability, high cost, and unpredictability of the transfer still remain to be resolved …”

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confidence: 99%

Flexible Crossbar‐Structured Resistive Memory Arrays on Plastic Substrates via Inorganic‐Based Laser Lift‐Off

et al. 2014

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Crossbar-structured memory comprising 32 × 32 arrays with one selector-one resistor (1S-1R) components are initially fabricated on a rigid substrate. They are transferred without mechanical damage via an inorganic-based laser lift-off (ILLO) process as a result of laser-material interaction. Addressing tests of the transferred memory arrays are successfully performed to verify mitigation of cross-talk on a plastic substrate.

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confidence: 99%

Flexible Crossbar‐Structured Resistive Memory Arrays on Plastic Substrates via Inorganic‐Based Laser Lift‐Off

et al. 2014

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“…So far, the main strategy for enabling high‐performance flexible devices has focused on maintaining the superb properties of the initially rigid semiconductor materials and devices during the layer transfer and film handling processes. Despite the seemingly diverse nature of those approaches, they can be classified in three general categories: (i) brute force methods that use combinations of chemical and mechanical thinning methods , (ii) epitaxial layer lift‐off and its variants that are based on the selective removal of a sacrificial layer sandwiched between the device layer and the substrate , and (iii) delamination through substrate cracking, also known as spalling . .…”

Section: Introductionmentioning

confidence: 99%

Energy band engineering of flexible gallium arsenide through substrate cracking with pre‐tensioned films

Alharbi

Shahrjerdi

2016

Physica Rapid Research Ltrs

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Flexible electronics based on the otherwise rigid conventional crystalline semiconductors is emerging as a new class of technology. However, the existing layer‐transfer approaches for implementing such technologies is mostly focused on maintaining the performance of the original device. Here we show that layer transfer through substrate cracking with a pre‐tensioned nickel film readily enables the manipulation of the electronic band structure in flexible gallium arsenide (GaAs) devices. We empirically and theoretically quantify the effect of ‘engineered' residual strain on the electronic band structure in these flexible GaAs devices. Photoluminescence and quantum efficiency measurements indicate the widening of the GaAs energy bandgap due to the residual compressive strain. The experimental results are in good agreement with our theoretical calculations. This study introduces a new way for strain engineering in flexible compound semiconductors with important implications for electronic and optoelectronic applications. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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“…Silicon integrated circuits (ICs) are fabricated on thick wafers and thinned down below 40 µm by chemical/mechanical polishing [3] or mechanical exfoliation technology [4] for further integrating the device layer onto a flexible substrate. Processing and handling of such an ultrathin silicon wafers is troublesome because of its fragile material nature, especially when wafer-level implementation is required.…”

Section: Introductionmentioning

confidence: 99%

“…Processing and handling of such an ultrathin silicon wafers is troublesome because of its fragile material nature, especially when wafer-level implementation is required. This demands adequate bonding techniques for integrating the ultrathin silicon IC wafers on a support layer as a flexible substrate [3]. However, neglecting the possibility of micro-defect generation on the back side of silicon IC wafers during the thinning process is one of the major causes of rupturing [5].…”

Section: Introductionmentioning

confidence: 99%

Rollable Silicon IC Wafers Achieved by Backside Nanotexturing

Kashyap

Zheng

Lai

et al. 2015

IEEE Electron Device Lett.

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This letter presents a wafer-level approach for producing rollable single crystal (sc)-silicon IC wafers, bent with a 17-mm minimum radius of curvature, achieved by back-side nanotexturing. The three-point bending test indicates a mechanical strength enhancement by a factor of 2.3 for nanotextured 60-µm thick samples. The minimum radius of curvature decreased by 43.4%, exhibiting improved flexibility. The carrier charge mobility increases by 4.9%, 12.6%, and 16.9% for the bending radii of 45 mm, 30 mm, and 24 mm, respectively. The increment of the mobility corresponds with the changing compressive stress in p-MOSFETs fabricated on the IC wafer.Index Terms-Flexible silicon ICs, p-MOSFETs, silicon nanotextures, mechanical strength, carrier charge mobility.

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Bendability of single-crystal Si MOSFETs investigated on flexible substrate

Cited by 23 publications

References 16 publications

Flexible Crossbar‐Structured Resistive Memory Arrays on Plastic Substrates via Inorganic‐Based Laser Lift‐Off

Flexible Crossbar‐Structured Resistive Memory Arrays on Plastic Substrates via Inorganic‐Based Laser Lift‐Off

Energy band engineering of flexible gallium arsenide through substrate cracking with pre‐tensioned films

Rollable Silicon IC Wafers Achieved by Backside Nanotexturing

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