Flexible Crossbar‐Structured Resistive Memory Arrays on Plastic Substrates via Inorganic‐Based Laser Lift‐Off

Abstract

Crossbar-structured memory comprising 32 × 32 arrays with one selector-one resistor (1S-1R) components are initially fabricated on a rigid substrate. They are transferred without mechanical damage via an inorganic-based laser lift-off (ILLO) process as a result of laser-material interaction. Addressing tests of the transferred memory arrays are successfully performed to verify mitigation of cross-talk on a plastic substrate.

Freeform Compliant CMOS Electronic Systems for Internet of Everything Applications

“…All-organic systems: integrating both devices and substrates made from organic materials or active materials devices inkjet (or screen-printed) on organic/paper substrates [38]- [42], and 2. Hybrid systems: combines the transfer of inorganic electronic devices onto flexible organic substrates using low-temperature direct deposition of inorganic on plastics using laser lift-off transfer or transfer printing techniques [18], [29], [43]- [46].…”

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

“…Figure 3b shows a representative generic transfer technique, where devices are fabricated on a specific rigid substrate and then transferred to one that is flexible (a banknote in this case). A specific type of transfer is the laser lift-off by Keon Jae Lee's group at the Korea Advanced Institute of Science and Technology (KAIST), where a laser shot is used to etch a sacrificial layer to release the device for transfer ( Figure 3c) [32]. Figure 3d shows a resistive memory structure made up of room-temperaturesputtered and e-beam-evaporated materials on a flexible substrate [33].…”

“…Copyright © 2013 WILEY-VCH Verlag GmbH & Co.; (c) schematic illustrations of the process for fabricating flexible crossbar-structured memory on a plastic substrate via the laser lift-off transfer method. Reprinted with permission from [32]. Copyright © 2014 WILEY-VCH Verlag GmbH & Co.; (d) schematic illustration of the cells in the conducting-interlayer SiOx memory device sputtered at room temperature.…”

Inkjet-Printed Multi-Bit Low-Voltage Fuse-Type Write-Once-Read-Many Memory Cell

“…RINTABLE memories on cheap plastic or paper substrates are required for a wide range of non-conventional intelligent electronics applications in item identification and anti-counterfeiting for brand protection and supply chain management [1][2][3][4][5][6]. Compared to the popularly studied re-programmable non-volatile memories [7][8][9][10], write-once read-many (WORM) memories are more suitable for those envisioned applications, since they only require programming once, and very stable memory states can be formed.…”