Below-IC post-CMOS integration of thick MEMS on a thin-SOI platform using embedded interconnects

Rajaraman, V.; Koning, J. J.; Ooms, E.R.; Pandraud, G.; Makinwa, Kofi A. A.; Boezen, H.

doi:10.1109/memsys.2012.6170130

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…The demonstrated accelerometers were fabricated using an in-house SOI CMOS process. A unique below IC integration of SOI MEMS has been employed with an NXP/Philips semiconductor (NPX Semiconductors, Eindhoven, The Netherlands) as an approach to fabricate various devices [ 96 ]. In contrast to most methods in which top silicon layer is used for MEMS structure, in this approach, bulk substrate is thinned down as thick MEMS structure and is connected to CMOS circuits located in thin top Si layer through polysilicon plug in thin SOI layer.…”

Section: Post-cmos Memsmentioning

confidence: 99%

CMOS MEMS Fabrication Technologies and Devices

2016

Micromachines

104

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This paper reviews CMOS (complementary metal-oxide-semiconductor) MEMS (micro-electro-mechanical systems) fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator) CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

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Section: Post-cmos Memsmentioning

confidence: 99%

CMOS MEMS Fabrication Technologies and Devices

2016

Micromachines

104

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“…With MEMS-first integration, the entire MEMS processing is performed on a substrate (typically resorting to bulk-micromachining techniques), followed by the fabrication of the semiconductor devices [9][10][11]. A severe limitation of this approach is that typical commercially available semiconductor process nodes are ordinarily not compatible with prealtered wafers.…”

Section: Benefits and Types Of Monolithic Integrationmentioning

confidence: 99%

A novel prototyping method for die-level monolithic integration of MEMS above-IC

Cicek

Zhang

Saha

et al. 2013

J. Micromech. Microeng.

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This work presents a convenient and versatile prototyping method for integrating surface-micromachined microelectromechanical systems (MEMS) directly above IC electronics, at the die level. Such localized implementation helps reduce development costs associated with the acquisition of full-sized semiconductor wafers. To demonstrate the validity of this method, variants of an IC-compatible surface-micromachining MEMS process are used to build different MEMS devices above a commercial transimpedance amplifier chip. Subsequent functional assessments for both the electronics and the MEMS indicate that the integration is successful, validating the prototyping methodology presented in this work, as well as the suitability of the selected MEMS technology for above-IC integration.

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Below-IC post-CMOS integration of thick MEMS on a thin-SOI platform using embedded interconnects

Cited by 2 publications

References 6 publications

CMOS MEMS Fabrication Technologies and Devices

CMOS MEMS Fabrication Technologies and Devices

A novel prototyping method for die-level monolithic integration of MEMS above-IC

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