Behaviour of electrical and optical properties of indium tin oxide transparent electrode after CMP process

Choi, Gwon Woo; Kim, Nam–Hoon; Seo, Yong-Jin; Lee, W.-S.

doi:10.1049/el:20060156

Cited by 11 publications

(1 citation statement)

References 5 publications

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“…The higher sheet resistance was thought to lower carrier concentration. Carrier concentration would be attributed to oxygen vacancies, such as the main carriers in films based on an oxide complex [23,24]. The oxygen vacancies would be lower due to the chemical reactions with the slurry in the CMP process.…”

Section: Resultsmentioning

confidence: 99%

Effect of Surface Treatment by Chemical-Mechanical Polishing for Transparent Electrode of Perovskite Solar Cells

Kim

Bark

2020

Energies

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Perovskite solar cells (PSCs) are usually fabricated by using the spin coating method. During the fabrication process, the surface status is very important for energy conversion between layers coated in the substrate. PSCs have multilayer-stacked structures, such as the transparent electrode layer, the perovskite layer, and a metal electrode. The efficiency and uniformity of all layers depend on the surface status of the transparent electrode coated on the glass substrate. Until now, etching methods by chemical processes have been introduced to make the substrate surface smooth and uniform by decreasing surface roughness. However, highly reactive chemical treatments can be harmful to the environment. In this study, we employed an eco-friendly chemical-mechanical polishing (CMP) process to ensure the fluorine-doped tin oxide (FTO) substrate is treated with a smooth surface. Before the perovskite layer and electron transport layer (ETL) are applied, the TiO2 layer is coated with the FTO substrate, and the surface of the FTO substrate is polished using CMP. As a result, the CMP-treated surface of the FTO substrate showed a smooth surface, and the PSCs with CMP treatment did not require conventional TiCl4 treatment.

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Section: Resultsmentioning

confidence: 99%

Effect of Surface Treatment by Chemical-Mechanical Polishing for Transparent Electrode of Perovskite Solar Cells

Kim

Bark

2020

Energies

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CMP properties and fabrication of OLED using MEH‐PPV

Lee

Choi

Seo

2008

Phys. Status Solidi (c)

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The interface between the electrode and organic layer in organic light emitting diode (OLED) has been reported as an important factor to influence the electrical and luminescent properties. Indium tin oxide (ITO) is commonly used as the anode material. ITO thin film has been deposited on glass substrate by radio frequency (RF) magnetron sputtering. And it was used as an anode contact to fabricate OLED device. The OLED devices with ITO/MEH‐PPV [2‐methoxy‐5‐(2‐ethylhexyloxy)‐p‐phenylenevinylene]/Al configuration were fabricated by thermal evaporation and spin coating, respectively. We investigated the electrical, structural and optical properties of ITO thin film, which was measured using the methods of atomic force microscope (AFM), field‐emission scanning electron microscope (FESEM) and ultraviolet–visible (UV–VIS) spectrophotometer. The interface property between ITO thin film and MEH‐PPV was improved as the surface of ITO thin film was smoothed and photoluminescence (PL) intensity was increased in the 680 nm range. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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CMP characteristics and optical property of ITO thin film by using silica slurry with a variety of process parameters

Choi

Lee

Kim

et al. 2006

Microelectronic Engineering

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Behaviour of electrical and optical properties of indium tin oxide transparent electrode after CMP process

Cited by 11 publications

References 5 publications

Effect of Surface Treatment by Chemical-Mechanical Polishing for Transparent Electrode of Perovskite Solar Cells

Effect of Surface Treatment by Chemical-Mechanical Polishing for Transparent Electrode of Perovskite Solar Cells

CMP properties and fabrication of OLED using MEH‐PPV

CMP characteristics and optical property of ITO thin film by using silica slurry with a variety of process parameters

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