Abstract:The behavior of nitrogen (N) atoms in plasma-nitrided silicon oxide (SiO2) formed by chemical vapor deposition (CVD) was characterized by physical analysis and from electrical properties. The changes in the chemical bonding and distribution of N in plasma-nitrided SiO2 were investigated for different subsequent processes. N–Si3, N–Si2O, and N2 are formed in a SiO2 film by plasma nitridation. N2 molecules diffuse out during annealing at temperatures higher than 900 °C. NH species are generated from N2 molecules… Show more
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