Beamline I311 at MAX-LAB: a VUV/soft X-ray undulator beamline for high resolution electron spectroscopy

Nyholm, R.; Andersen, J. N.; Johansson, Ulf; Jensen, Bente; Lindau, I.

doi:10.1016/s0168-9002(01)00399-0

Cited by 200 publications

(141 citation statements)

References 7 publications

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“…Typically, the temperature measured across the sample varies less than 20 ºC. LEEM, µ-LEED, ARPES and PES were utilized at beamline I311 [20] and I4 [21] at the MAX-lab synchrotron radiation facility in Lund, Sweden. Beamline I311 is equipped with a modified SX700 monochromator, which provides light for two end stations.…”

Section: Methodsmentioning

confidence: 99%

Studies of Li intercalation of hydrogenated graphene on SiC(0001)

et al. 2012

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The effects of Li deposition on hydrogenated bilayer graphene on SiC(0001) samples, i.e. on quasi-freestanding bilayer graphene samples is studied using low energy electron microscopy, micro-low-energy electron diffraction and photoelectron spectroscopy. After deposition, some Li atoms form islands on the surface creating defects that are observed to disappear after annealing. Some other Li atoms are found to penetrate through the bilayer graphene sample and into the interface where H already resides. This is revealed by the existence of shifted components, related to H-SiC and Li-SiC bonding, in recorded core level spectra. The Dirac point is found to exhibit a rigid shift to about 1.25 eV below the Fermi level, indicating strong electron doping of the graphene by the deposited Li.

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Section: Methodsmentioning

confidence: 99%

Studies of Li intercalation of hydrogenated graphene on SiC(0001)

et al. 2012

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“…10 The overall resolution of the spectra varied between 30 and 260 meV for photon energies ranging from 33 to 600 eV. The spectra reported here are recorded at room temperature and at normal emission, with 55°as the fixed angle between incoming beam and analyzer.…”

Section: Methodsmentioning

confidence: 99%

Resonant processes and Coulomb interactions in (C59N)2

Schulte

Wang

Moriarty

et al. 2007

The Journal of Chemical Physics

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We have determined the on-site molecular Coulomb interaction energy U of a ͑C 59 N͒ 2 bulk film and find values ranging from 1.10± 0.10 eV for the highest occupied molecular orbital to 1.35± 0.10 eV for the deeper lying orbitals, comparable to values found in C 60 . The on-site Coulomb interaction between a carbon core hole and valence electrons, U c , is, however, substantially lower than in C 60 at 1.35± 0.07 eV. Resonant photoemission ͑RESPES͒ results show a weakened participator decay channel, especially around the N 1s threshold, where resonance of the highest occupied molecular orbital shoulder is absent. Near-edge x-ray absorption fine structure and constant initial state measurements, taken in parallel with the RESPES data, indicate, however, that matrix element effects cannot be ruled out.

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“…18 According to the literature, the In 5s photoionization cross sections should be rather small compared to the ones for O 2p (∼6.7% at 105 eV photon energy). 21 Even at 185 eV-where the In 5s cross section is about 25% of the O 2p cross section-the surface state could not be observed. Indeed, angle-resolved photoemission spectroscopy (ARPES) measurements of surface states close to E F derived from In 5s are typically taken with a much lower photon energy of ∼10 eV.…”

Section: Surface Statesmentioning

confidence: 97%

“…The SX-700 monochromator at beamline I311 supplies photons in the energy range from 43 to 1500 eV. 21 The spectroscopy end station is used for high-resolution XPS and NEXAFS measurements under UHV conditions (base pressure: <3 × 10 −10 mbar). The preparation chamber includes, among others, an argon ion sputter gun, LEED optics, mass spectrometer, and an atomic oxygen source.…”

Section: Pesmentioning

confidence: 99%

Bulk and surface characterization of In2O3(001) single crystals

et al. 2012

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A comprehensive bulk and surface investigation of high-quality In 2 O 3 (001) single crystals is reported. The transparent-yellow, cube-shaped single crystals were grown using the flux method. Inductively coupled plasma mass spectrometry (ICP-MS) reveals small residues of Pb, Mg, and Pt in the crystals. Four-point-probe measurements show a resistivity of 2.0 ± 0.5 × 10 5 cm, which translates into a carrier concentration of ≈10 12 cm −3 . The results from x-ray diffraction (XRD) measurements revise the lattice constant to 10.1150(5)Å from the previously accepted value of 10.117Å. Scanning tunneling microscopy (STM) images of a reduced (sputtered/annealed) and oxidized (exposure to atomic oxygen at 300• C) surface show a step height of 5Å, which indicates a preference for one type of surface termination. The surfaces stay flat without any evidence for macroscopic faceting under any of these preparation conditions. A combination of low-energy ion scattering (LEIS) and atomically resolved STM indicates an indium-terminated surface with small islands of 2.5Å height under reducing conditions, with a surface structure corresponding to a strongly distorted indium lattice. Scanning tunneling spectroscopy (STS) reveals a pronounced surface state at the Fermi level (E F ). Photoelectron spectroscopy (PES) shows additional, deep-lying band gap states, which can be removed by exposure of the surface to atomic oxygen. Oxidation also results in a shoulder at the O 1s core level at a higher binding energy, possibly indicative of a surface peroxide species. A downward band bending of 0.4 eV is observed for the reduced surface, while the band bending of the oxidized surface is of the order of 0.1 eV or less.

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Beamline I311 at MAX-LAB: a VUV/soft X-ray undulator beamline for high resolution electron spectroscopy

Cited by 200 publications

References 7 publications

Studies of Li intercalation of hydrogenated graphene on SiC(0001)

Studies of Li intercalation of hydrogenated graphene on SiC(0001)

Resonant processes and Coulomb interactions in (C59N)2

Bulk and surface characterization of In2O3(001) single crystals

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