Beam waist shrinkage of high-power broad-area diode lasers by mode tailoring

Su, Jiaxin; Tong, Cunzhu; Wang, Lijie; Wang, Yanjing; Lü, Hongliang; Zhao, Zhide; Wang, Jun; Tan, Shaoyang; Shu, Shili

doi:10.1364/oe.390265

Cited by 8 publications

(2 citation statements)

References 22 publications

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“…Moreover, certain methods are technologically intricate, consequently constraining their applicability. Microstructures [16][17][18] have been implemented in near and mid-infrared lasers to compensate for the poor mode discrimination of BA lasers by selectively introducing higher-order mode optical losses. Considering the power maintenance, simplicity, and stable mode selection performance, the devices have great potential for applications.…”

Section: Introductionmentioning

confidence: 99%

Precise mode control of mid-infrared high-power laser diode using on-chip advanced sawtooth waveguide designs

Shi,

Yang,

Chen

et al. 2024

High Pow Laser Sci Eng

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Power scaling in conventional broad-area (BA) lasers often leads to the operation of higher-order lateral modes, resulting in a multiple-lobe far-field profile with large divergence. Here, we report an advanced sawtooth waveguide (ASW) structure integrated onto a wide ridge waveguide. It strategically enhances the loss difference between higherorder modes and the fundamental mode, thereby facilitating high-power narrow-beam emission. Both optical simulations and experimental results illustrate the significant increase

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Section: Introductionmentioning

confidence: 99%

Precise mode control of mid-infrared high-power laser diode using on-chip advanced sawtooth waveguide designs

Shi,

Yang,

Chen

et al. 2024

High Pow Laser Sci Eng

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“…By designing the ridge waveguide in a bent shape [6], researchers can control the waveguide's curvature to manage the loss of higher-order lateral modes. Alternatively, microstructures are etched at the edges of the broad ridge waveguide to enable loss clipping of higher-order lateral modes [7,8]. However, these methods have the drawback of causing significant loss to the fundamental lateral mode while suppressing higher-order lateral modes, or they introduce complex design, making fabrication more challenging.…”

Section: Introductionmentioning

confidence: 99%

High-power single-mode semiconductor lasers based on supersymmetric structures around 795 nm

Wang,

Dong

et al. 2023

Optical Design and Testing XIII

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High-power single-mode laser diodes around 795 nm are widely used in applications such as Rb atomic clocks and nuclear magnetic resonance imaging. We simulate a high-power single-mode semiconductor laser around 795 nm based on a supersymmetric structure. In the lateral direction, the mode stability characteristics are investigated by varying the three waveguides widths and the distances between the middle main waveguide and the two sub-waveguides. Since the left and right waveguides have different widths, the optimal distance from them to the main waveguide is also different. In order to ensure the single-mode operating of the laser, there is a pair of optimized distances from the left and right waveguides to the main waveguide. The distances from the left and right waveguides to the main waveguide are 1 µm and 1.2 µm, respectively, when the widths of the left waveguide, right waveguide and main waveguide are set as 2.3 µm, 3.5 µm and 6 µm, respectively. In the longitudinal direction, a laterally-coupled grating structure is used to achieve longitudinal mode selection. Such lasers are expected to be the next generation of high-power, narrow-linewidth, singlemode laser diodes.

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Ultra-stable and low-divergence high-power antimonide light emitters with on-chip mode filter

Shi,

Yang,

Wang

et al. 2023

Applied Physics Letters

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Antimonide semiconductor laser diodes with high brightness are ideal light sources for a variety of applications. However, the traditional structure of broad-area (BA) lasers with high-power output is normally accompanied by a multi-lobed far field profile and large lateral divergence. In this paper, we put up an on-chip microstructure for mode filtering. The excellent mode control capability is doubly confirmed by optical field simulations and complete device measurements. The optimized device shows an enhanced continuous-wave output power in exceeding of 1.3 W at room temperature, along with a reduced threshold current and increased peak power conversion efficiency. Moreover, it exhibits an ultra-stable lateral far field with a 45.6% reduction in divergence and a notable 75.5% improvement in current dependence compared with conventional BA diode lasers. The minimum divergence is as low as 5.64° for full width at half maximum definition.

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Beam waist shrinkage of high-power broad-area diode lasers by mode tailoring

Cited by 8 publications

References 22 publications

Precise mode control of mid-infrared high-power laser diode using on-chip advanced sawtooth waveguide designs

Precise mode control of mid-infrared high-power laser diode using on-chip advanced sawtooth waveguide designs

High-power single-mode semiconductor lasers based on supersymmetric structures around 795 nm

Ultra-stable and low-divergence high-power antimonide light emitters with on-chip mode filter

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