2007
DOI: 10.1016/j.optcom.2007.01.063
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Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs

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Cited by 4 publications
(2 citation statements)
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“…The spectral linewidth is 0.1 nm, which is near the spectrometer resolution. The Gaussian far-field profile exhibits a 10°beam divergence, consistent with past reports [18]- [20]. Comparison of the lasing emission in Fig.…”
Section: Experimental Characterizationsupporting
confidence: 90%
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“…The spectral linewidth is 0.1 nm, which is near the spectrometer resolution. The Gaussian far-field profile exhibits a 10°beam divergence, consistent with past reports [18]- [20]. Comparison of the lasing emission in Fig.…”
Section: Experimental Characterizationsupporting
confidence: 90%
“…The optical loss arising from the photonic crystal surrounding such a defect cavity contributes to suppression of higher order modes [16]. The etched photonic crystal can reduce the beam divergence to less than 20°, a typical value for a similar sized oxide-confined VCSEL, but the beam divergence is sensitive to the etch depth of the photonic crystal [18]- [20].…”
mentioning
confidence: 99%