BCl3/Ne etching of III–V semiconductors in a planar inductively coupled plasma reactor

Lim, Wantae; Baek, I. K.; Lee, J.W.; Lee, E.S.; Jeon, Minhyon; Cho, G.S.; Pearton, S. J.

doi:10.1016/j.apsusc.2003.08.009

Cited by 4 publications

(1 citation statement)

References 26 publications

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“…When using a photoresist mask, it has been shown that etching AlGaAs with BCl 3 chemistry (with Ar or neon (Ne)) can passivate sidewalls via the re-deposition of BCl x fragments, etch products and resist-containing residues [20,21]. N 2 is a common additive to chlorine species to intentionally degrade resists in order to produce sidewall passivation with a polymer deposition [12,21,22].…”

Section: Introductionmentioning

confidence: 99%

Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N₂-promoted passivation

et al. 2010

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Semiconductor nanowaveguides are the key structure for light-guiding nanophotonics applications. Efficient guiding and confinement of single-mode light in these waveguides require high aspect ratio geometries. In these conditions, sidewall verticality becomes crucial. We fabricated such structures using a top-down process combining electron beam lithography and inductively coupled plasma (ICP) etching of hard masks and GaAs/AlGaAs semiconductors with Al concentrations varying from 0 to 100%. The GaAs/AlGaAs plasma etching was a single-step process using a Cl(2)/BCl(3)/Ar gas mixture with various fractions of N(2). Scanning electron microscope (SEM) observations showed that the presence of nitrogen generated the deposition of a passivation layer, which had a significant effect on sidewall slope. Near-ideal vertical sidewalls were obtained over a very narrow range of N(2), allowing the production of extremely high aspect ratios (>32) for 80 nm wide nanowaveguides.

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Section: Introductionmentioning

confidence: 99%

Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N₂-promoted passivation

et al. 2010

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Etching and oxidation of InAs in planar inductively coupled plasma

Dultsev

Kesler

2009

Applied Surface Science

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Composition, morphology and surface recombination rate of HCl–isopropanol treated and vacuum annealed InAs(111)A surfaces

Kesler

Селезнев

Kovchavtsev

et al. 2010

Applied Surface Science

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BCl3/Ne etching of III–V semiconductors in a planar inductively coupled plasma reactor

Cited by 4 publications

References 26 publications

Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N₂-promoted passivation

Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N₂-promoted passivation

Etching and oxidation of InAs in planar inductively coupled plasma

Composition, morphology and surface recombination rate of HCl–isopropanol treated and vacuum annealed InAs(111)A surfaces

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BCl3/Ne etching of III–V semiconductors in a planar inductively coupled plasma reactor

Cited by 4 publications

References 26 publications

Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N2-promoted passivation

Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N2-promoted passivation

Etching and oxidation of InAs in planar inductively coupled plasma

Composition, morphology and surface recombination rate of HCl–isopropanol treated and vacuum annealed InAs(111)A surfaces

Contact Info

Product

Resources

About

Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N₂-promoted passivation

Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N₂-promoted passivation