Etching and oxidation of InAs in planar inductively coupled plasma

Dultsev, F. N.; Kesler, V. G.

doi:10.1016/j.apsusc.2009.08.009

Cited by 3 publications

(2 citation statements)

References 14 publications

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“…Evaporation of elemental arsenic decreases the effects of surface passivation. Similar regularities were found in (Dultsev & Kesler, 2009); the results of studies related to accumulation of As at InAs surface may be found in (Sun et al, 2008;. Optimal preparation modes of the surface of InAs (111) are surface etching in HCl-IPA solution for 5-30 minutes and subsequent annealing of samples in vacuum for 30-60 minutes at temperatures about (300 -350)°C.…”

Section: Preliminary Sample Preparationsupporting

confidence: 66%

Observation of Chemical Reactions in Solid Phase Using X-Ray Photoelectron Spectroscopy

Suprun¹,

Kesler²,

Fedosenko³

2012

Stoichiometry and Materials Science - When Numbers Matter

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Section: Preliminary Sample Preparationsupporting

confidence: 66%

Observation of Chemical Reactions in Solid Phase Using X-Ray Photoelectron Spectroscopy

Suprun¹,

Kesler²,

Fedosenko³

2012

Stoichiometry and Materials Science - When Numbers Matter

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“…However, most of the chlorine-containing gases contain carbon and often problems are encountered with the deposition of polymer films during etching, resulting in a poor material surface quality, and therefore degraded device performances. Various surface treatment methods to improve the surface quality have been investigated, such as oxygen plasma treatment [8] and surface passivation techniques, etc. However, these methods seem to be complex, costly and time consuming.…”

mentioning

confidence: 99%

InAs FinFETs Performance Enhancement by Superacid Surface Treatment

Zeng

Khandelwal

Shariar

et al. 2019

IEEE Trans. Electron Devices

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In this paper, post superacid (SA) treatment was for the first time proposed to enhance the performance of InAs FinFETs on SiO2/Si substrate. Typically, the subthreshold swing (SS) has reduced from 217 mV/dec to 170 mV/dec and transconductance (gm) has increased from 6.44 μS/μm to 26.5 μS/μm after SA treatment, respectively. It was found that the interfacial In2O3 at the InAs/ZrO2 interface was effectively reduced after SA treatment due to strong protonating nature of SA solution. As a result, the interface trap density was reduced leading to a pronounced reduction of sheet resistance after SA treatment. The modeling of transfer characteristics indicates the carrier mobility is enhanced by 5.8~7.1 folds after SA treatment due to interfacial traps reduction. The results suggest that SA treatment can be potentially extended to other III-V MOSFETs to enhance the device performances.

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