2018 IEEE International Electron Devices Meeting (IEDM) 2018
DOI: 10.1109/iedm.2018.8614564
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BAW Filters for 5G Bands

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Cited by 92 publications
(35 citation statements)
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“…Moreover, it should be noted that scaling acoustic filters toward high frequencies is critical but fraught with challenges [12]. For frequencies above 2.5 GHz, BAW filters are needed but come with significantly higher cost compared to SAW filters which are commonly deployed below 2.5 GHz [13].…”
mentioning
confidence: 99%
“…Moreover, it should be noted that scaling acoustic filters toward high frequencies is critical but fraught with challenges [12]. For frequencies above 2.5 GHz, BAW filters are needed but come with significantly higher cost compared to SAW filters which are commonly deployed below 2.5 GHz [13].…”
mentioning
confidence: 99%
“…In addition to the spurious modes, the acoustic energy confinement also affects the quality factor of the devices. The energy confinement is more critical in the higher frequency because the acoustic losses, including damping loss of metal, often increase with the square of frequency or even worse [28], [51], [52]. To minimize the damping loss, the vibration of A-modes should be restricted in the cavity of LiNbO 3 between the interdigital electrodes.…”
Section: B Energy Confinement and Propagation Directionmentioning
confidence: 99%
“…SAW devices require narrow interdigital electrodes with sub-200-nm width to scale the resonant frequencies to be over 3.5 GHz, which leads to high loss and poor power handling [25]. FBAW or BAW devices are commonly limited in the radio bands below 6 GHz as the edge effects and spurious modes are more pronounced in the higher frequency [28]. Efforts have been made to scale the FBAW device to be 30 GHz [30].…”
Section: Introductionmentioning
confidence: 99%
“…Scaling SAW devices over 3.5 GHz requires a sub-200-nm width for interdigital electrodes, which leads to high loss and poor power handling. For BAW devices, efforts have been made to scale them to the X-band (8)(9)(10)(11)(12) [6], [7]. To this end, AlN thin films are thinned down to be around 175 nm, which introduces very stringent requirements on film quality and thickness uniformity [8].…”
Section: Introductionmentioning
confidence: 99%