Bauschinger effect and anomalous thermomechanical deformation induced by oxygen in passivated thin Cu films on substrates

X-Ray Diffraction Studies of Forward and Reverse Plastic Flow in Nanoscale Layers During Thermal Cycling

“…[1] Rather, the phenomena can stem from the driving force to remove dislocation line length at interfaces. This process is depicted in Figure 6(b) insets and it has been observed in microscopy [38,[50][51][52] and simulations. [44,[53][54][55][56] Figure 7 shows interfacial dislocation density ρ interface (Equation (8)) vs. T for the Cu-21 nm/Ni-21 nm film.…”

Dislocation dynamics simulations of dislocation interactions and stresses in thin films

“…4 are related to film strength, it is instructive to compare these with the average stresses in the film as might be measured in an X-ray [36] or substrate curvature [7] experiment. Fig.…”

“…While the primary function of such films is often electrical or chemical, thin films often support stresses that can be an order of magnitude greater than could be supported by the corresponding bulk material [1][2][3][4][5][6][7][8][9]. These high stresses can lead to film failures in the form of fracture [10], delamination [11], creep [12,13], or void or hillock formation [14].…”

Atomistic modeling of nanowires, small-scale fatigue damage in cast magnesium, and materials for MEMS

“…Thin films often contain many excess vacancies as the result of their formation process, e.g. sputtering or evaporation [51,52]. To some extent, our specimens may be dissimilar because excess vacancies, which contribute to dislocation nucleation, may have been removed in the annealing process.…”