Batch processing of nanometer-scale electrical circuitry based on in-situ grown single-walled carbon nanotubes

Marty, Laëtitia; Bouchiat, Vincent; Bonnot, A.M.; Chaumont, M.; Fournier, Thierry; Decossas, S.; Roche, Stephan

doi:10.1016/s0167-9317(02)00487-2

Cited by 28 publications

(15 citation statements)

References 11 publications

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“…[13][14][15][16][17] In a recent work, we also demonstrated that by using a rapid growth method and a thin-film triple layer ͑Al+ Fe+ Mo͒ as the catalyst, one could deposit isolated SWCNTs without the presence of unwanted amorphous carbon. 9 This technique has several advantages.…”

Section: Introductionmentioning

confidence: 86%

Thin-film metal catalyst for the production of multi-wall and single-wall carbon nanotubes

Lacerda

Teo

Teh

et al. 2004

Journal of Applied Physics

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Section: Introductionmentioning

confidence: 86%

Thin-film metal catalyst for the production of multi-wall and single-wall carbon nanotubes

Lacerda

Teo

Teh

et al. 2004

Journal of Applied Physics

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“…On the other hand, it was studied experimentally that contact resistance in the order of hundreds of kiloohms or megaohms was measured when positioning a single CNT on a metal electrode [30] or depositing metal electrodes across a selected signal CNT [31]. Besides, it was indicated in [32] that contact resistance exists between the nanotube bundles and the metal electrodes due to observed discrepancy of three orders of magnitude when different methods were used to measure the resistance. Therefore, the contact resistance should have an influence on the variation of resistance.…”

Section: B Power Consumptionmentioning

confidence: 99%

Dielectrophoretic Batch Fabrication of Bundled Carbon Nanotube Thermal Sensors

Fung

Wong

Chan

et al. 2004

IEEE Trans. Nanotechnology

112

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Abstract-We present a feasible technology for batch assembly of carbon nanotube (CNT) devices by utilizing ac electrophoretic technique to manipulate multiwalled bundles on an Si/SiO 2 substrate. Based on this technique, CNTs were successfully and repeatably manipulated between microfabricated electrodes. By using this parallel assembly process, we have investigated the possibility of batch fabricating functional CNT devices when an ac electrical field is applied to an array of microelectrodes that are electrically connected together. Preliminary experimental results showed that over 70% of CNT functional devices can be assembled successfully using our technique, which is considered to be a good yield for nanodevices manufacturing. Besides, the devices were demonstrated to potentially serve as novel thermal sensors with low power consumption ( microwatts) with electronic circuit response of approximately 100 kHz in constant current mode operation. In this paper, we will present the fabrication process of this feasible batch manufacturable method for functional CNT-based thermal sensors, which will dramatically reduce production costs and production time of nanosensing devices and potentially enable fully automated assembly of CNT-based devices. Experimental results from the thermal sensors fabricated by this batch process will also be discussed.Index Terms-AC electrophoretic manipulation, carbon nanotube (CNT), CNT sensors, nano batch fabrication, nanomanufacturing.

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“…During the HFCVD step, CNTs grow directly from one catalyst-covered electrode and connect the facing one [17]. As the electrical connection is performed in situ, the devices are operational right after the growth and without any postprocess.…”

Section: Methodsmentioning

confidence: 99%

Integration of self-assembled carbon nanotube transistors: statistics and gate engineering at the wafer scale

et al. 2006

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We present a full process based on chemical vapour deposition that allows fabrication and integration at the wafer scale of carbon-nanotube-based field effect transistors. We make a statistical analysis of the integration yield that allows assessment of the parameter fluctuations of the titanium-nanotube contact obtained by self-assembly. This procedure is applied to raw devices without post-process. Statistics at the wafer scale reveal the respective role of semiconducting and metallic connected nanotubes and show that connection yields up to 86% can be reached. For large scale device integration, our process has to implement both wafer-scale self-assembly of the nanotubes and high transistor performances. In order to address this last issue, a gate engineering process has been investigated. We present the improvements obtained using low and high κ dielectrics for the gate oxide.

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Batch processing of nanometer-scale electrical circuitry based on in-situ grown single-walled carbon nanotubes

Cited by 28 publications

References 11 publications

Thin-film metal catalyst for the production of multi-wall and single-wall carbon nanotubes

Thin-film metal catalyst for the production of multi-wall and single-wall carbon nanotubes

Dielectrophoretic Batch Fabrication of Bundled Carbon Nanotube Thermal Sensors

Integration of self-assembled carbon nanotube transistors: statistics and gate engineering at the wafer scale

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