Basic parameter measurement and channel broadening effect in the submicrometer MOSFET

Peng, Kathy; Oh, Soo‐Young; Afromowitz, Martin A.; Moll, J.L.

doi:10.1109/edl.1984.25993

Cited by 23 publications

(2 citation statements)

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“…7 with good agreement. Work by Peng et al 10 confirmed this by simulating the ''channel-broadening'' effect or variation of L mask with V gs . Chern advocates applying a constant, large V gs ӷV t to minimize errors due to uncertainty in the determination of the threshold voltage and shows that a 50 mV error or offset in the V t can result in a greater than 10% error in L eff .…”

Section: Review Of L Eff Extraction Algorithmsmentioning

confidence: 82%

Extraction of two-dimensional metal–oxide–semiconductor field effect transistor structural information from electrical characteristics

Richards

Shen

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inTwo-dimensional ultrashallow junction characterization of metal-oxide-semiconductor field effect transistors with strained silicon Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy J. Vac. Sci. Technol. B 22, 358 (2004); 10.1116/1.1627792 Two-dimensional dopant concentration profiles from ultrashallow junction metal-oxide-semiconductor field-effect transistors using the etch/transmission electron microscopy method Two-dimensional dopant profile of 0.2 μm metal-oxide-semiconductor field effect transistors Comparison of two-dimensional carrier profiles in metal-oxide-semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling As metal-oxide-semiconductor technology continues to scale to deep submicron feature sizes, the two-dimensional nature of the implanted impurity profiles becomes a critical component of the device design. Device performance in both the off state and on state, as well as device manufacturability, yield, and reliability, depend heavily on a good understanding of the depth, spread, and shape of these profiles. It is often necessary for the device designer to obtain quick, accurate information about these junctions based upon test structures and metal-oxidesemiconductor field effect transistor ͑MOSFET͒ electrical characteristics. With junction depths required well below 100 nm for source/drain and lightly doped drain features of very deep submicron MOSFETs, characterization with spatial resolutions on the order of 10 nm is required. In this work, a summary of the techniques used for extracting lateral profile information in a MOSFET channel are presented and compared with physical measurements from the literature. A technique is reviewed which allows extraction of lateral source/drain profile information from the electrical characteristics of a single transistor nondestructively.

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Section: Review Of L Eff Extraction Algorithmsmentioning

confidence: 82%

Extraction of two-dimensional metal–oxide–semiconductor field effect transistor structural information from electrical characteristics

Richards

Shen

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Publisher Item Identifier S 001 8-9383(96)04041-5. v s resistance measurements, the methods [ 11, [2], [4] determined L,R in a high gate overdrive range, which are applicable for conventional MOSFETs; while the method presented in [8] used a low gate overdrive range for LDD MOSFET's. There is no definite method to determine the magnitude of gate overdrive.…”

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confidence: 99%

A new extraction algorithm for the metallurgical channel length of conventional and LDD MOSFETs

Jean

1996

IEEE Trans. Electron Devices

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A new extraction algorithm for the metallurgical channel length of conventional and LDD MOSFET's is presented, which is based on the well-known resistance method with performing a special technique to eliminate the uncertainty of the channel length as well as to reduce the influence of the parasitic source/drain resistance on threshold-voltage determination. l n particular, the metallurgical channel length is determined from a wide range of gate-voltage-dependent effective channel length at an adequate gate overdrive. The 2-D numerical analysis clearly show that the adequate gate overdrive is strongly dependent on the dopant concentration in the source/drain region. Therefore, an analytic equation is derived to determine the adequate gate overdrive for various source/drain and channel doping. It shows that higher and lower gate overdrives are needed to accurately determine the metallurgical channel length of conventional and LDD MOSFET devices, respectively. It is the first time that we can give a correct gate overdrive to extract Lmet not only for conventional devices but also for LDD MOS devices. Besides, the parasitic source/drain resistance can also be extracted using our new extraction algorithm.

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Methods for extracting the effective channel length of MOSFETs

Liou

Ortíz‐Conde

Sánchez

1998

Analysis and Design of Mosfets

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Basic parameter measurement and channel broadening effect in the submicrometer MOSFET

Cited by 23 publications

References 0 publications

Extraction of two-dimensional metal–oxide–semiconductor field effect transistor structural information from electrical characteristics

Extraction of two-dimensional metal–oxide–semiconductor field effect transistor structural information from electrical characteristics

A new extraction algorithm for the metallurgical channel length of conventional and LDD MOSFETs

Methods for extracting the effective channel length of MOSFETs

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