Basic Aspects of Atomic Ordering in III–V Semiconductor Alloys

Quantitative order‐parameter measurement in lattice‐mismatched AlInP using precession electron diffraction

“…Qualitatively, AlInP films grown at 650 °C showed the strongest superlattice‐spot intensity over the temperature range examined. But stronger ordering in double‐variant than single‐variant samples is somewhat unexpected, as the largest bandgap reduction for lattice‐matched GaInP is known to occur in single‐variant films 31 . This could be associated with the AlInP composition, or a consequence of metamorphic growth.…”

“…An early study of Al 0.5 In 0.5 P grown by MOCVD at three different temperatures reported weak ordering for growth at 610 • C, and relatively strong ordering at 700 and 740 • C. 30 However, few studies have been performed to estimate the order parameters of off-stochiometric (metamorphic) films. A more recent study of metamorphic Al 0.33 In 0.67 P samples for LEDs estimated a growth temperature of 680 • C for maximum order strength, based on a parabolic fit of bandgap measurements for samples grown at 620, 650, and 760 • C. 4 In the work presented here, the diffraction and analysis methods we have described were applied to the measurement of order parameter in metamorphic double-(6 • -<111>A) and single-variant (6 31 This could be associated with the AlInP composition, or a consequence of metamorphic growth. Alternatively, it may indicate an influence on the bandgap of features unique to the double-variant ordered microstructure, such as domain boundaries, or the reduced sizes of single-phase domains of either variant.…”

Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates

“…However, this work does indicate that, like III–Vs with mixed group V compositions, III–V ternaries with mixed group III compositions can be grown controllably by H 2 O–CSVT. Further investigations of Ga 1– x In x P growth will enable fundamental studies of III–V growth phenomena such as CuPt ordering, which is known to occur in all VPE growth systems but has not been documented in CSVT, as well as studies of intentional doping parallel to previous work in this system. , Additional work on Ga 1– x In x P will focus on the optimization of growth parameters to increase electronic and crystalline quality, and on analysis of long-term compositional stability from a single source, before this material is implemented in a CSVT-grown solar cell.…”