Barrier‐Guided Growth of Micro‐ and Nano‐Structured Graphene

Safron, Nathaniel S.; Kim, Myungwoong; Gopalan, Padma; Arnold, Michael S.

doi:10.1002/adma.201104195

Cited by 80 publications

(64 citation statements)

References 29 publications

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“…Very recently, Safron et al reported the fabrication of GNR arrays and GNM via e-beam lithography and block copolymer lithography23. In this work, we show that large-scale graphene nanostructures can be directly grown on patterned copper (Cu) foil, which can be easily transferred for device application, and that the as-grown graphene nanostructures possess much smoother edges compared with etched counterpart, which is confirmed by direct observation with transmission electron microscopy (TEM).…”

supporting

confidence: 67%

CVD Growth of Large Area Smooth-edged Graphene Nanomesh by Nanosphere Lithography

Wang

Gan

et al. 2013

Sci Rep

116

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Current etching routes to process large graphene sheets into nanoscale graphene so as to open up a bandgap tend to produce structures with rough and disordered edges. This leads to detrimental electron scattering and reduces carrier mobility. In this work, we present a novel yet simple direct-growth strategy to yield graphene nanomesh (GNM) on a patterned Cu foil via nanosphere lithography. Raman spectroscopy and TEM characterizations show that the as-grown GNM has significantly smoother edges than post-growth etched GNM. More importantly, the transistors based on as-grown GNM with neck widths of 65-75 nm have a near 3-fold higher mobility than those derived from etched GNM with the similar neck widths.

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supporting

confidence: 67%

CVD Growth of Large Area Smooth-edged Graphene Nanomesh by Nanosphere Lithography

Wang

Gan

et al. 2013

Sci Rep

116

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“…This method has been effective in dialing in the right interfacial energies between a solid substrate and an overlying block copolymer (BCP) film [2,42,43], leading to perpendicularly oriented periodic microdomain arrays. These domains are useful for nanolithographic applications [44][45][46][47][48][49][50][51]. In a seminal work of Mansky et al, surface-grafted a hydroxyl terminated poly(styrene-random-methyl methacrylate) (P(S-r-MMA)) brush to modify the interfacial energies between the substrate and the blocks of poly(styrene-block-methyl methacrylate) (P(S-b-MMA)) [2,40,42,[52][53][54][55][56] (Figure 2c,d).…”

Section: Solid State Graftingmentioning

confidence: 99%

From Self-Assembled Monolayers to Coatings: Advances in the Synthesis and Nanobio Applications of Polymer Brushes

et al. 2015

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Abstract:In this review, we describe the latest advances in synthesis, characterization, and applications of polymer brushes. Synthetic advances towards well-defined polymer brushes, which meet criteria such as: (i) Efficient and fast grafting, (ii) Applicability on a wide range of substrates; and (iii) Precise control of surface initiator concentration and hence, chain density are discussed. On the characterization end advances in methods for the determination of relevant physical parameters such as surface initiator concentration and grafting density are discussed. The impact of these advances specifically in emerging fields of nano-and bio-technology where interfacial properties such as surface energies are controlled to create nanopatterned polymer brushes and their implications in mediating with biological systems is discussed.

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“…Although this equation does not take into account the entire complex physics occurring in nanostructured graphene, it is still appropriate as it seems to have a reasonable match with experimental data for various NPG structures. [47] While extensive studies have been carried out on the physical properties of SLG, less is known about the electrical properties of FLG structures. We find that the electrical properties in graphene nanoscale transistors are strongly affected by the number of graphene layers, the channel width, and the trapped charge in the SiO 2 substrate, consistent with the findings by Lin and Avouris [48] and Sui and Appenzeller [49].…”

Section: Resultsmentioning

confidence: 99%

Nanopatterned Graphene Field Effect Transistor Fabricated Using Block Co-polymer Lithography

Choi

Kuru

Choi

et al. 2014

Materials Research Letters

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We demonstrate a successful fabrication of Nanopatterned Graphene (NPG) using a PS-b-P4VP polymer, which was never used previously for the graphene patterning. The NPG exhibits homogeneous mesh structures with an average neck width of ∼19 nm. Electronic characterization of single and few layers NPG FETs (field effect transistors) were performed at room temperature. We found that the sub-20 nm neck width creates a quantum confinement in NPG, which has led to a bandgap opening of ∼0.08 eV. This work also demonstrates that BCP (block co-polymer) lithography is a pathway for low-cost, high throughput large-scale production of NPG with critical dimensions down to the nanometer regime.

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Barrier‐Guided Growth of Micro‐ and Nano‐Structured Graphene

Cited by 80 publications

References 29 publications

CVD Growth of Large Area Smooth-edged Graphene Nanomesh by Nanosphere Lithography

CVD Growth of Large Area Smooth-edged Graphene Nanomesh by Nanosphere Lithography

From Self-Assembled Monolayers to Coatings: Advances in the Synthesis and Nanobio Applications of Polymer Brushes

Nanopatterned Graphene Field Effect Transistor Fabricated Using Block Co-polymer Lithography

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