Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts

Sang, Liwen; Qin, Zhixin; Long-Bin, Cen; Chen, Zhizhong; Zhi‐Jian, Yang; Shen, Bo; Zhang, Guoyi

doi:10.1088/0256-307x/24/10/062

Cited by 5 publications

(1 citation statement)

References 11 publications

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“…[ formation of NiO on AlGaN is the main factor to influence the change of serial resistance. [15] The metal work function of Ag (4.26 eV) is less than that of Ni (5.15 eV), and it is widely known that Ni has a relatively high metal work function and good adhesion on GaN. [16] Thus, in our analysis of the I-V characteristics of the Schottky contact current, it would be more appropriate to use the equation that takes into account the thermionic emission.…”

Section: Methodsmentioning

confidence: 99%

Ni/Ag Schottky contacts on Al_0.11Ga_0.89N grown on Si (1 1 1) substrate by plasma-assisted MBE

Yusoff

Hassan

et al. 2015

Composite Interfaces

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Al 0.11 Ga 0.89 N/GaN samples are grown by plasma-assisted molecular beam epitaxy method on (1 1 1) silicon substrates. High purity gallium (7N) and aluminum (6N5) were used to grow Al 0.11 Ga 0.89 N, GaN, and AlN, respectively. The surface morphology, structural and optical properties of the sample has been investigated by scanning electron microscope (SEM), and high-resolution X-ray diffraction (HR-XRD), respectively. HR-XRD measurement showed that the sample has a typical diffraction pattern of hexagonal Al 0.11 Ga 0.89 N/GaN heterostructures. Ni/Ag bilayers are deposited on Al 0.11 Ga 0.89 N as the Schottky contacts. The effect of annealing in oxygen ambient on the electrical properties of Ni/Ag/Al 0.11 Ga 0.89 N is studied by currentvoltage measurement. The annealing at a temperature of 700°C for 10 min results in an increase in the ideality factor from 1.033 to 1.042 and an increase in the Schottky barrier height from 0.708 to 0.811 eV. Furthermore, the annealing in oxygen ambient also leads to an increase in the surface roughness of the contacts from 0.0098 to 0.1360 μm which is in agreement with the SEM results.

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Section: Methodsmentioning

confidence: 99%

Ni/Ag Schottky contacts on Al_0.11Ga_0.89N grown on Si (1 1 1) substrate by plasma-assisted MBE

Yusoff

Hassan

et al. 2015

Composite Interfaces

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Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation

Liu

Wang

et al. 2018

Materials Science in Semiconductor Processing

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Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga₂O₃ thin-film heterojunction

Liu¹,

Zhang²,

Zhi³

et al. 2021

J. Phys. D: Appl. Phys.

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In this work, an enhanced-performance deep-ultraviolet (DUV) photodetector based on a Ga2O3/lead zirconate titanate (Pb(Zr0.52Ti0.48)O3, PZT) p-n heterojunction is fabricated and characterized for the first time. Compared to a Ga2O3-based device, the heterojunction device achieved a lower dark current of 2.7 × 10−11 A, a higher photo- to dark-current ratio of 2 × 103, a higher responsivity of 5.5 mA W−1, a larger specific detectivity of 2.6 × 1011 Jones and a higher external quantum efficiency of 2.7% at −2 V under 254 nm UV light illumination with an intensity of 500 μW cm−2. The p-PZT/n-Ga2O3 was confirmed to be a potential candidate for the construction of DUV photodetectors with enhanced sensing performance.

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Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts

Cited by 5 publications

References 11 publications

Ni/Ag Schottky contacts on Al_0.11Ga_0.89N grown on Si (1 1 1) substrate by plasma-assisted MBE

Ni/Ag Schottky contacts on Al_0.11Ga_0.89N grown on Si (1 1 1) substrate by plasma-assisted MBE

Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation

Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga₂O₃ thin-film heterojunction

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Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts

Cited by 5 publications

References 11 publications

Ni/Ag Schottky contacts on Al0.11Ga0.89N grown on Si (1 1 1) substrate by plasma-assisted MBE

Ni/Ag Schottky contacts on Al0.11Ga0.89N grown on Si (1 1 1) substrate by plasma-assisted MBE

Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation

Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga2O3 thin-film heterojunction

Contact Info

Product

Resources

About

Ni/Ag Schottky contacts on Al_0.11Ga_0.89N grown on Si (1 1 1) substrate by plasma-assisted MBE

Ni/Ag Schottky contacts on Al_0.11Ga_0.89N grown on Si (1 1 1) substrate by plasma-assisted MBE

Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga₂O₃ thin-film heterojunction