Barrier dependent electron tunneling lifetime in one-dimensional device structures

Li, Hui; Gong, Jian; Hu, Xing; Qi, Fei

doi:10.1063/1.3514129

Cited by 3 publications

(1 citation statement)

References 23 publications

(14 reference statements)

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“…Strongly electron bound states have a longer tunneling lifetime. Resonant tunneling devices eventually reach their speed limits due to the tunneling lifetime [34]. The probability of LH tunneling was about 22.3%, which is smaller than that of electron and HH tunneling.…”

Section: Resultsmentioning

confidence: 99%

Resonant Tunneling of Electrons and Holes through the InxGa1−xN/GaN Parabolic Quantum Well/LED Structure

Althib

2022

Crystals

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Models describing the tunneling of electrons and holes through parabolic InxGaN1−x/GaN quantum well/LED structures with respect to strain were developed. The transmission coefficient, tunneling lifetime, and efficiency of LED structures were evaluated by solving the Schrödinger equation. The effects of the mole fraction on the structure strain, resonant tunneling and tunneling lifetime, and LH–HH splitting were characterized. The value of LH–HH splitting increased and remained higher than the Fermi energy; therefore, only the HH band was dominant in terms of the valence band properties. The results indicate that an increase in the mole fraction can lead to efficiency droop.

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Section: Resultsmentioning

confidence: 99%

Resonant Tunneling of Electrons and Holes through the InxGa1−xN/GaN Parabolic Quantum Well/LED Structure

Althib

2022

Crystals

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Electronic transmission and dwell time on a double barrier system with an accelerating quantum well

Aktaş

Yilmaz

2016

Physica E: Low-dimensional Systems and Nanostructures

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Tunneling lifetimes of electrons escaping from atoms under a static electric field

Zhao

Sarwono

2017

The Journal of Chemical Physics

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The tunneling lifetime of an electron escaping from an atom is calculated using a projected Green's function method, combining with the radial potential of the atom which is obtained from density functional theory. Results of the calculated electron tunneling lifetimes in model systems such as a quantum dot are shown to be comparable with other theoretical studies. For the first time, we have obtained the tunneling lifetimes of electrons escaping from a series of atoms (He, Ne, Ar, Kr, H, Li, Na, K) under a static electric field. Dependent on both the barrier width/height and the bound strength of the ground state electron, the calculated tunneling lifetime under a static electric field spans from femtosecond level to picosecond level, consistent with the attosecond-level results in experiments using a time-dependent external field.

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Barrier dependent electron tunneling lifetime in one-dimensional device structures

Cited by 3 publications

References 23 publications

Resonant Tunneling of Electrons and Holes through the InxGa1−xN/GaN Parabolic Quantum Well/LED Structure

Resonant Tunneling of Electrons and Holes through the InxGa1−xN/GaN Parabolic Quantum Well/LED Structure

Electronic transmission and dwell time on a double barrier system with an accelerating quantum well

Tunneling lifetimes of electrons escaping from atoms under a static electric field

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