Bandwidth of integrated photodiodes in standard CMOS for CD/DVD applications

Radovanovic, S.; Annema, Anne-Johan; Nauta, Bram

doi:10.1016/j.microrel.2004.09.011

Cited by 6 publications

(3 citation statements)

References 4 publications

(8 reference statements)

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“…One might assume that the production spread in time constants between the equalizer and the diode itself might ruin the performance, but thanks to the low roll off, even +/-20% spread in time constants hardly affects the time pulses. The resulting chip achieved 3Gbit/sec in standard 0.18μm CMOS, with a BER of 10 -11 at an optical input power of 25μW [9]. The speed limitation was in the electronic circuit, and is expected to scale with technology.…”

Section: Optical Detectors In Standard Cmosmentioning

confidence: 99%

Analog IC Design at the University of Twente

Nauta

2007

IEEE Solid-State Circuits Newsl.

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Section: Optical Detectors In Standard Cmosmentioning

confidence: 99%

Analog IC Design at the University of Twente

Nauta

2007

IEEE Solid-State Circuits Newsl.

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“…In this sense, optical and electrical devices fabricated in silicon technology allow satisfying the requirements previously cited [2][3]. The maturity of silicon technology represents a powerful platform that is truly compatible with standard CMOS processing [4][5], and by consequence, very attractive from the economic point of view. In this sense, the goal of this work resides in achieving a full performance evaluation of an integrated optoelectronic receiver that was designed by one of the authors [6].…”

Section: Introductionmentioning

confidence: 96%

Performance Evaluation of an Integrated Optoelectronic Receiver

Vera-Marquina

Martínez-Castillo

Zaldívar-Huerta

et al. 2014

Journal of Applied Research and Technology

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This work describes the optical and electrical characterization of an integrated optoelectronic receiver. The receiver is composed of a photodiode and a transimpedance amplifier, both fabricated in silicon technology using a 0.8 µm BiCMOS process. The total area occupied by the photodiode is of 10,000 µm 2 . In a first step, the generated photocurrent of the photodiode is measured for the wavelengths of 780 nm and 830 nm at different levels of optical power. In a second step, the responsivity and quantum efficiency parameters of the photodiode are computed. Finally, an electrical measurement including the transimpedance amplifier is achieved. A potential application for this optoelectronic receiver is on the first optical communications window.

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“…This form of integration is very popular in the optical communications world, both wired and wireless, in the past decade [2][3][4][5]. Apart from communications, it also finds a number of implementations in optical storage systems [6]. In the optical sensory sectors, numerous applications such as camera sensory devices, optical microsensors particularly used in medical monitoring, and remote controls have benefited greatly from the capability of the latest CMOS processes to fabricate optoelectronic integrated circuit (OEIC) [7].…”

Section: Introductionmentioning

confidence: 99%

Design of Pixellated CMOS Photon Detector for Secondary Electron Detection in the Scanning Electron Microscope

Chuah

Holburn

2011

Advances in OptoElectronics

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This paper presents a novel method of detecting secondary electrons generated in the scanning electron microscope (SEM). The method suggests that the photomultiplier tube (PMT), traditionally used in the Everhart-Thornley (ET) detector, is to be replaced with a configurable multipixel solid-state photon detector offering the advantages of smaller dimension, lower supply voltage and power requirements, and potentially cheaper product cost. The design of the proposed detector has been implemented using a standard 0.35 μm CMOS technology with optical enhancement. This microchip comprises main circuit constituents of an array of photodiodes connecting to respective noise-optimised transimpedance amplifiers (TIAs), a selector-combiner (SC) circuit, and a postamplifier (PA). The design possesses the capability of detecting photons with low input optical power in the range of 1 nW with 100 μm × 100 μm sized photodiodes and achieves a total amplification of 180 dBΩ at the output.

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Bandwidth of integrated photodiodes in standard CMOS for CD/DVD applications

Cited by 6 publications

References 4 publications

Analog IC Design at the University of Twente

Analog IC Design at the University of Twente

Performance Evaluation of an Integrated Optoelectronic Receiver

Design of Pixellated CMOS Photon Detector for Secondary Electron Detection in the Scanning Electron Microscope

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