Bandgap engineering and quantum wells in optoelectronic devices

Li, E.H.; Weiss, B.L.

doi:10.1049/ecej:19910014

Cited by 6 publications

(2 citation statements)

References 2 publications

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“…The direct growth of III-V, II-VI, and IV-IV heterostructures has given rise to many devices today in volume manufacturing [45]. Heterostructures of these materials have been grown predominantly by molecular beam epitaxy (MBE) [46], and by metal-organic chemical vapour deposition and, given that the individual layers have a thickness of at least several nanometres, their growth at reduced temperatures, to minimize inter-diffusion, is now pervasive.…”

Section: Fabrication Of Vertical and Lateral Heterostructuresmentioning

confidence: 99%

Quantum engineering of transistors based on 2D materials heterostructures

et al. 2018

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Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

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Section: Fabrication Of Vertical and Lateral Heterostructuresmentioning

confidence: 99%

Quantum engineering of transistors based on 2D materials heterostructures

et al. 2018

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“…1 One way in which the properties of QW structures may be tailored is by postgrowth modification of the QW confinement profile using controlled interdiffusion across the well/barrier interface. Tailoring the optical properties of QW structures for the optimization of device performance and the development of novel fabrication processes has been the subject of much interest for many years.…”

Section: Introductionmentioning

confidence: 99%

Thermal stability of AlGaAs/GaAs single quantum well structures using photoreflectance

Hughes

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inApplication of phase-sensitive photoreflectance spectroscopy to a study of undoped AlGaAs/GaAs quantum well structures J.The thermal stability of two AlGaAs/GaAs single quantum well structures was investigated using room-temperature photoreflectance. Rapid thermal annealing between 800 and 1000°C for times up to 180 s showed spectral ''blue'' shifts for both the ground state and higher order interband transitions of the quantum well due to Al and Ga interdiffusion across the well/barrier interface resulting in a modification of the quantum well confinement profile. The sensitivity of these transition energies to Al-Ga interdiffusion depended on both the quantum well structure and annealing conditions. The results were correlated with a theoretical model, which was developed previously to determine the effects of interdiffusion on the subband structure of quantum well samples, to give characteristics interdiffusion lengths of less than 20 Å for these annealing conditions. These interdiffusion lengths corresponded to limited interdiffusion and was confirmed from polarization sensitivity measurements where the anisotropic polarization behavior of the quantum well was maintained for these annealing conditions. The analysis of these results agrees well with the model and gives Al/Ga interdiffusion coefficients of ϳ2.9ϫ10 Ϫ17 and ϳ9.2ϫ10 Ϫ17 cm 2 /s at 900 and 1000°C, respectively.

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Band structure calculations of InxGa1−xSb under pressure

Bouarissa¹,

Aourag²

1995

Infrared Physics & Technology

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Bandgap engineering and quantum wells in optoelectronic devices

Cited by 6 publications

References 2 publications

Quantum engineering of transistors based on 2D materials heterostructures

Quantum engineering of transistors based on 2D materials heterostructures

Thermal stability of AlGaAs/GaAs single quantum well structures using photoreflectance

Band structure calculations of InxGa1−xSb under pressure

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