Band structure calculations of InxGa1−xSb under pressure

Bouarissa, N.; Aourag, H.

doi:10.1016/1350-4495(95)00038-z

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Cited by 4 publications

(1 citation statement)

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“…Note that the bowing parameter decreases with increasing pressure up to 20 kbar. This behavior is similar to that reported in In x Ga 1−x Sb ternary semiconductor alloys [27]. Particular attention has also been devoted to the behavior of the crossover point (at which the Γ and X valley minima have the same energies) when pressure is applied.…”

Section: Pressure Dependencessupporting

confidence: 60%

Effects of hydrostatic pressure and temperature on electronic band parameters in AlxGa1?xAs

Boucenna

Bouarissa

2005

Czech J Phys

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Influence of hydrostatic pressure and temperature on electronic band parameters for zinc-blende AlxGa1−xAs was investigated by means of pseudopotential calculations. The agreement between our results and the available experimental data is generally satisfactory. Our results showed that the effect of pressure leads to a decrease of the crossing point and the optical bowing parameter. However, the temperature effect was found to be insignificant on both crossing point and bowing parameter.PACS : 71.20.Nr

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Section: Pressure Dependencessupporting

confidence: 60%

Effects of hydrostatic pressure and temperature on electronic band parameters in AlxGa1?xAs

Boucenna

Bouarissa

2005

Czech J Phys

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Other Miscellaneous Semiconductors and Related Binary, Ternary, and Quaternary Compounds

Chen

Ravindra

2019

Semiconductors

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Pressure dependence of energy gap of III–V and II–VI ternary semiconductors

Chen

Ravindra

2012

J Mater Sci

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A general expression for the pressure dependence of the energy gap of a series of group III-V and group II-VI ternary semiconductors have been derived based on Van Vechten's dielectric theory. The results obtained are in good accord with the available experimental data. The trends in the variation of the pressure dependence of the energy gap with the nearest neighbor distance and Phillips ionicity are explored qualitatively.

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Band structure calculations of InxGa1−xSb under pressure

Cited by 4 publications

References 36 publications

Effects of hydrostatic pressure and temperature on electronic band parameters in AlxGa1?xAs

Effects of hydrostatic pressure and temperature on electronic band parameters in AlxGa1?xAs

Other Miscellaneous Semiconductors and Related Binary, Ternary, and Quaternary Compounds

Pressure dependence of energy gap of III–V and II–VI ternary semiconductors

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