Bandgap Effects of Quantum Well Active-Layer on Threshold Current Density, Differential Gain and Temperature Characteristics of 1.3 µm InGaAlAs/InP Quantum Well Lasers

Bae, Seong-Ju; Park, Seoung–Hwan; Lee, Yong-Tak

doi:10.1143/jjap.41.1354

Cited by 4 publications

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“…Growth was initiated by heating an InP:S substrate wafer in PH 3 to the growth temperature, growing a 0.2 µm InP:Si buffer layer, then depositing an AlInGaAs layer or heterostructure. The substrate orientation was either exact (100), or vicinal, with a misorientation of 2-6 o toward <111>A.…”

Section: Methodsmentioning

confidence: 99%

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Low-threshold, high-T 0 and high-efficiency 1300nm and 1500nm lasers with AlInGaAs active region grown by MOCVD

et al. 2004

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We report results for broad area edge emitting lasers having AlInGaAs active regions that exhibit low thresholds, high T 0 and T 1 and high efficiencies. The lasers were grown on InP substrates using MOCVD. This paper analyzes the effects of doping, epilayer design, wavelength dependence and number of QWs on device performance. Our results show that the concentration and offset of zinc doping in the p-cladding layer plays a major role in carrier confinement and hence high temperature performance. The difference in surface mobility of Al adatoms (as compared to In or Ga) poses some challenges in the growth of AlInGaAs.

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Section: Methodsmentioning

confidence: 99%

“…This is attributed to improved carrier confinement resulting from a higher conduction band offset [1][2][3][4][5][6][7][8][9][10]. It has also been observed that the ratio of radiative to non-radiative recombination is also higher in the AlInGaAs system [5].…”

Section: Introductionmentioning

confidence: 99%

Low-threshold, high-T 0 and high-efficiency 1300nm and 1500nm lasers with AlInGaAs active region grown by MOCVD

et al. 2004

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“…A compressive well with tensile barrier has been theoretically [10,18,19,27,28] and experimentally [22,29,30] shown to achieve high gain, differential gain and a large modulation bandwidth. A 0.88% compressive strain In 0.75 Ga 0.25 As 0.81 P 0.19 well and In 0.41 Ga 1−y Al y As 0.83% tensile strained barrier are considered in this study.…”

Section: Single Quantum Well Materials Gainmentioning

confidence: 99%

Design optimization of InGaAsP–InGaAlAs 1.55 µm strain-compensated MQW lasers for direct modulation applications

Akram¹,

Silfvenius²,

Berggren³

et al. 2004

Semicond. Sci. Technol.

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In this paper, a simulation study of InGaAsP(well)/InGaAlAs(barrier) 1.55 µm strain-compensated multi-quantum well (MQW) lasers is presented. Due to a large conduction band discontinuity in this material system, a higher material gain and differential gain can be obtained from such a quantum well (QW) as compared to a traditional InGaAsP/InGaAsP quantum well. The deeper electron well should also improve elevated temperature operating characteristics and reduce the electron spillover from QWs. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and the strain in the barriers. A large number of quantum wells can be uniformly pumped, reducing the carrier density in each individual well. A uniform and low carrier density in all the wells help reduce the total Auger recombination current. High p-doping in the active region is shown to enhance the carrier and gain non-uniformity in the MQWs. A simulated high modulation bandwidth has been demonstrated, promising directly modulated lasers as a low-cost source for short to medium distance (1-10 km) high speed optical links.

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“…In quaternary materials, the amount of strain and the bandgap can be independently determined. Many material combinations can therefore be used as an active layer, and many researchers have consequently tried to optimize the InGaAsP and InGaAlAs QW structures (Thijs et al 1994;Park et al 1998;Bae et al 2002).…”

Section: Introductionmentioning

confidence: 99%

Tensile-strained 1.3 μm InGaAs/InGaAlAs quantum well structure of high temperature characteristics

Bae

Lee

2008

Opt Quant Electron

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A new tensile strained InGaAs/InGaAlAs quantum well structure in the 1.3 µm wavelength region is proposed for high temperature characteristics via quantum well band structure and optical gain calculations. To obtain such features, a tensile-strained InGaAs/InGaAlAs quantum well structure, which emits light dominated by TM polarization, is considered. This proposed structure has very high temperature characteristics (T 0 > 130 K) due to its high density of state at the first transition edge. This results clearly show the potential of tensile strained quantum well structure usage for the high temperature operation of quantum well semiconductor lasers.

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Bandgap Effects of Quantum Well Active-Layer on Threshold Current Density, Differential Gain and Temperature Characteristics of 1.3 µm InGaAlAs/InP Quantum Well Lasers

Cited by 4 publications

References 0 publications

Low-threshold, high-T 0 and high-efficiency 1300nm and 1500nm lasers with AlInGaAs active region grown by MOCVD

Low-threshold, high-T 0 and high-efficiency 1300nm and 1500nm lasers with AlInGaAs active region grown by MOCVD

Design optimization of InGaAsP–InGaAlAs 1.55 µm strain-compensated MQW lasers for direct modulation applications

Tensile-strained 1.3 μm InGaAs/InGaAlAs quantum well structure of high temperature characteristics

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