Band structure and microstructure modulations enable high quality factor to elevate thermoelectric performance in Ge0.9Sb0.1Te-x%FeTe2

Jin, Yang; Hong, Tao; Wang, Dongyang; Xiao, Yu; He, Wei; Gao, Xiang; Qiu, Yuting; Zhao, Li‐Dong

doi:10.1016/j.mtphys.2021.100444

Cited by 18 publications

(20 citation statements)

References 50 publications

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“…This further leads to an ultrahigh ZT ave ≈ 1.46 at 303–773 K, which is superior to these reported GeTe samples, such as ZT ave ≈ 1.21 in GeTe‐SnTe, [ 30 ] ZT ave ≈ 1.20 in GeTe‐PbSe, [ 57 ] ZT ave ≈ 1.20 in GeTe‐GeSe, [ 46 ] ZT ave ≈ 1.24 in GeTe‐Bi 2 Te 3 , [ 48 ] ZT ave ≈ 1.20 in GeTe‐CrTe, [ 49 ] ZT ave ≈ 1.04 in GeTe‐Cu 2 Te, [ 40 ] and ZT ave ≈ 1.25 in GeTe‐FeTe 2 . [ 45 ] Importantly, the excellent thermoelectric properties obtained in this work exhibit superior thermal stability and reliability, which is verified by cycle testing (heating–cooling), as illustrated in Figure S8 in the Supporting Information.…”

Section: Resultssupporting

confidence: 54%

“…Due to the rather high µW and the remarkably decreased κ lat , an increment of nearly 53% is attained in the GeTe‐2%CdSe at 673 K compared to that of Ge 0.9 Sb 0.1 Te. As illustrated in Figure 7b, the weighted mobility and the reciprocal of lattice thermal conductivity of GeTe‐ x %CdSe in this work are superior to those of other H ‐alloyed ( H = GeSe, [ 46 ] In 2 Te 3 , [ 34 ] MnTe, [ 43 ] PbTe, [ 44 ] FeTe 2 , [ 45 ] CrTe, [ 49 ] AgSbTe 2 , [ 47 ] Bi 2 Te 3 [ 48 ] ) GeTe thermoelectrics.…”

Section: Resultsmentioning

confidence: 78%

“…TE performance of Ge 0.9 Sb 0.1 Te‐ x %CdSe ( x = 0, 1, 2, 3, 4, 5): a) the comparison of µW and 1/κ lat between this work and reported (GeTe‐GeSe, [ 46 ] GeTe‐In 2 Te 3 , [ 34 ] GeTe‐PbTe, [ 44 ] GeTe‐MnTe, [ 43 ] GeTe‐FeTe 2 , [ 45 ] GeTe‐CrTe, [ 49 ] GeTe‐AgSbTe 2 , [ 47 ] and GeTe‐Bi 2 Te 3 [ 48 ] ); b) quality factor; c) ZT values; d) ZT ave compared with previous reported data (GeTe‐SnTe, [ 30 ] GeTe‐PbSe, [ 56 ] GeTe‐GeSe, [ 46 ] GeTe‐Bi 2 Te 3 , [ 48 ] GeTe‐CrTe, [ 49 ] GeTe‐Cu 2 Te, [ 40 ] and GeTe‐FeTe 2 . [ 45 ] ).…”

Section: Resultsmentioning

confidence: 93%

“…It is essential to balance the μ H and m * for optimizing the electrical transport properties. To comprehensive assess the role of CdSe alloying on carrier transport characteristics of GeTe, we make comparisons with other M ‐alloyed GeTe thermoelectrics at room temperature ( M = MnTe, [ 43 ] PbTe, [ 44 ] CdTe, [ 36 ] FeTe 2 , [ 45 ] GeSe, [ 46 ] In 2 Te 3 , [ 34 ] AgSbTe 2 [ 47 ] ), as depicted in Figure 2c. Obviously, the m * and μ H can be well equilibrated upon CdSe alloying, finally resulting in the maximum µW of ≈199 cm 2 V −1 s −1 and optimum PF at room temperature, as depicted in Figure 2c.…”

Section: Resultsmentioning

confidence: 99%

“…Electrical transport properties analysis of Ge 0.9 Sb 0.1 Te‐ x %CdSe ( x = 0, 1, 2, 3, 4, and 5): a) temperature‐dependent weighted mobility and b) temperature‐dependent carrier density. c) Comparison of weighted mobility and PF (the inset) in M ‐alloyed GeTe thermoelectrics at 300 K ( M = MnTe, [ 43 ] PbTe, [ 44 ] CdTe, [ 36 ] FeTe 2 , [ 45 ] GeSe, [ 46 ] In 2 Te 3 , [ 34 ] AgSbTe 2 [ 47 ] ) as function of carrier density. d) Comparison of the peak PF among GeTe‐based thermoelectric materials with similar carrier density.…”

Section: Resultsmentioning

confidence: 99%

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Outstanding CdSe with Multiple Functions Leads to High Performance of GeTe Thermoelectrics

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et al. 2022

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coefficient, σ represents electrical conductivity, T represents working temperature in Kelvin, κ ele denotes electronic thermal conductivity, and κ lat denotes lattice thermal conductivity. [4,5] Extensive efforts are devoted to decoupling these correlative parameters. [6] Electrically, the strategies of band convergence, [2] band alignment, [4,7] densityof-states (DOS) distortion, [8,9] modulation doping, [10] enhancing the symmetry of crystal [11] and quantum confinement [12] are successfully established to equilibrate the Seebeck coefficient (S) and the electrical conductivity (σ) in favor of a superior power factor (PF). [13] It is well known that the enhanced band degeneracy due to band convergence could increase the effective mass a bit without degrading the carrier mobility. And DOS distortion, which improves the band effective mass, is a feasible strategy with risks for deteriorating the carrier mobility. [14] It is clear that the optimal balance between the effective mass and the carrier mobility is beneficial for the electrical performance of TE materials. This relationship primarily depends on the weighted mobility, µW = μ H (m * /m e ) 3/2 , where μ H represents the carrier mobility, m * represents the DOS effective mass, and m e represents the unit electron mass.Thermally, intensifying the phonon scattering is considered to be an effective method to decrease the thermal conductivity (κ lat ), which is generally classified into incorporating extra phonon scattering centers [15] and seeking inherent low lattice thermal conductivity materials. [16,17] The latter representing materials might have a complex crystal structure, [1] heavy constituent elements, [18] intense lattice anharmonicity, [19] and soft chemical bonding. [20] And the extra phonon scattering sources include point defects, nanoprecipitates, grain boundaries, and so on. [21] To date, state-of-the-art TE materials, including Zintl phase, [22] half-Heusler, [23] skutterudite, [24] SiGe, [25] chalcogenides, [8,26] and Bi 2 Te 3 -based compounds, [27] etc., exhibit prominent thermoelectric performance.GeTe is proven to be an eminent mid-temperature thermoelectric material. [28,29] The well-recognized characters of GeTe are multiple valance bands, phase transition, ultrahigh carrier concentration, and high thermal conductivity, which diversify the degrees of freedom to tailor its TE performance. [30][31][32] Counter-doping using aliovalent elements, such as Bi, Sb, and In, [33,34] is a common method to achieve the optimal carrier Thermoelectric materials can achieve the direct conversion between electricity and heat, which has drawn extensive attention in recent decades. Understanding the chemical nature of band structure and microstructure is essential to boost the thermoelectric performance of given materials. Herein, CdSe alloying promotes the evolution of multiple valence bands in GeTe, resulting in the contemporaneous appearance of band convergence and density of state distortion, which benefits the sharply enhanced effective mass from ...

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Section: Resultssupporting

confidence: 54%

Section: Resultsmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

Outstanding CdSe with Multiple Functions Leads to High Performance of GeTe Thermoelectrics

Jin

Wang

Hong

et al. 2022

Advanced Energy Materials

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Organic/Inorganic Hybrid Design as a Route for Promoting the Bi_0.5Sb_1.5Te₃ for High‐Performance Thermoelectric Power Generation

Wang

Cheng

Yin

et al. 2022

Adv Funct Materials

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Bismuth telluride alloys favor the applications of low-grade waste heat recovery if their figure-of-merits are improved within the larger temperature range from 300 to 523 K. Herein, this work reports a synergistic optimization for Bi 0.5 Sb 1.5 Te 3 (BST) by incorporating the copper(II) phthalocyanine (CuPc), which is preferentially distributed at the grain boundary of BST after the spark plasma sintering process and suppresses the grain growth of BST. The lattice thermal conductivity of composites is then extensively reduced by the multiscale scattering induced by the CuPc. In addition, the Cu atoms diffuse into the lattice of BST and increase the whole concentration, thus suppressing the bipolar effect. As a result, the average zT value is effectively enhanced from 0.7 to 1.1 in the temperature range between 300 and 523 K. A high conversion efficiency of 6.8% is achieved in a single BST/CuPc 5 leg, which is 41.7% higher than that of BST at temperature different ΔT = 223 K. This result proves that the composition optimization of the BST/CuPc is a promising strategy to improve the application of BST-based TE modules.

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Interstitial Cu: An Effective Strategy for High Carrier Mobility and High Thermoelectric Performance in GeTe

Yin

Liu

et al. 2023

Adv Funct Materials

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Dense point defects can strengthen phonon scattering to reduce the lattice thermal conductivity and induce outstanding thermoelectric performance in GeTe‐based materials. However, extra point defects inevitably enlarge carrier scattering and deteriorate carrier mobility. Herein, it is found that the interstitial Cu in GeTe can result in synergistic effects, which include: 1) strengthened phonon scattering, leading to ultralow lattice thermal conductivity of 0.48 W m−1 K−1 at 623 K; 2) weakened carrier scattering, contributing to high carrier mobility of 80 cm2 V−1 s−1 at 300 K; 3) optimized carrier concentration of 1.22 × 1020 cm−3. Correspondingly, a high figure‐of‐merit of ≈2.3 at 623 K can be obtained in the Ge0.93Ti0.01Bi0.06Te‐0.01Cu, which corresponds to a maximum energy conversion efficiency of ≈10% at a temperature difference of 423 K. This study systematically investigates the doping behavior of the interstitial Cu in GeTe‐based thermoelectric materials for the first time and demonstrates that the localized interstitial Cu is a new strategy to enhance the thermoelectric performance of GeTe‐based thermoelectric materials.

show abstract

Band structure and microstructure modulations enable high quality factor to elevate thermoelectric performance in Ge0.9Sb0.1Te-x%FeTe2

Cited by 18 publications

References 50 publications

Outstanding CdSe with Multiple Functions Leads to High Performance of GeTe Thermoelectrics

Outstanding CdSe with Multiple Functions Leads to High Performance of GeTe Thermoelectrics

Organic/Inorganic Hybrid Design as a Route for Promoting the Bi_0.5Sb_1.5Te₃ for High‐Performance Thermoelectric Power Generation

Interstitial Cu: An Effective Strategy for High Carrier Mobility and High Thermoelectric Performance in GeTe

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Band structure and microstructure modulations enable high quality factor to elevate thermoelectric performance in Ge0.9Sb0.1Te-x%FeTe2

Cited by 18 publications

References 50 publications

Outstanding CdSe with Multiple Functions Leads to High Performance of GeTe Thermoelectrics

Outstanding CdSe with Multiple Functions Leads to High Performance of GeTe Thermoelectrics

Organic/Inorganic Hybrid Design as a Route for Promoting the Bi0.5Sb1.5Te3 for High‐Performance Thermoelectric Power Generation

Interstitial Cu: An Effective Strategy for High Carrier Mobility and High Thermoelectric Performance in GeTe

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Organic/Inorganic Hybrid Design as a Route for Promoting the Bi_0.5Sb_1.5Te₃ for High‐Performance Thermoelectric Power Generation