Band selection filter for ultra-wideband/Ku dual-band low-noise amplifier in the CMOS process

Chiou, Hwann-Kaeo; Lin, Jui-Yi; Tai, Chiung-Feng

doi:10.1049/iet-map.2010.0384

Cited by 2 publications

(8 citation statements)

References 14 publications

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“…Based on available articles, WB LNTA was another proposed wideband structure in the 2010s that usually had power dissipation problem [252, 276, 287, 297, 335, 339], compared to the optimum UWB LNAs in Table 3. Studying [161–200, 201–250, 251–300, 301–361] shows that the LNTA idea for wideband applications was not welcomed in the 2010s by engineers; infact, most of the works focussed on WB/UWB LNAs. But note that this issue does not mean that LNTA is a useless idea.…”

Section: Discussionmentioning

confidence: 99%

“…In the 2010s, MOSFET scaling reached 5 nm from 32 nm [30] and many studies [161–200, 201–250, 251–300, 301–361] were carried out by focussing on improving the mentioned topologies and techniques which were presented in the 2000s for wideband LNA. As examples, we can refer to ‘the noise/distortion cancelation topologies’ [164, 167, 173, 181, 189, 192, 194, 195, 201, …”

Section: Uwb Lnamentioning

confidence: 99%

“…But ‘notch filter technique’ was a new idea for wideband LNA in the 2010s to reject interferers [161, 164, 196, 283] and that was called IRLNA (Interfere Rejection LNA) [196, 283]. Most of studies in this decade were carried out as a CMOS process because of its scaling successes: the CMOS [161, 162, 164, 165, 167–173, 176–182, 184, 185, 188–190, 192–196, 199–212, 214–221, 223, 225–236, 238, 240, 242–252, 254, 256–262, 264, 266–268, 270, 271, 273–277, 282, 283, 285–293, 295, 298, 302–309,…”

Section: Uwb Lnamentioning

confidence: 99%

“…Considering the works of 2010s, [161–200, 201–250, 251–300, 301–361] it seems that optimum ultrawideband designs in the BiCMOS, the CMOS and the HEMT technologies are allocated to [305, 337, 345], respectively. In 2017, Ch.…”

Section: Uwb Lnamentioning

confidence: 99%

“…Among CMOS works of the 2010s, some of them had low

{normalP}_{dc}

with higher NF, lower bandwidth and worse IIP 3 [162, 164, 171, 177, 181, 202, 207, 212, 214, 216, 219, 225, 228, 231, 232, 254, 266, 290, 292, 298, 302, 326, 327, 338, 340, 341, 355] and others had high P dc (7 to 72 mW) while some of them also had higher NF or lower A V [161, 165, 167, 169, 170, 173, 176, 178, 179, 182, 184, 185, 188–190, 193–196, 199, 201–211, 215, 217, 218, 220, 221, 223, 238, 244–252, 256–262, 268, 273–276,…”

Section: Uwb Lnamentioning

confidence: 99%

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Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Discussionmentioning

confidence: 99%

Section: Uwb Lnamentioning

confidence: 99%

Section: Uwb Lnamentioning

confidence: 99%

Section: Uwb Lnamentioning

confidence: 99%

“…Among CMOS works of the 2010s, some of them had low

{normalP}_{dc}

Section: Uwb Lnamentioning

confidence: 99%

See 3 more Smart Citations

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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Noise figure and input intercept point's errors in an AGC‐less microwatt ultrawideband system (limiter and low noise amplifier)

Shahrabadi

2021

IET Communications

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The goal is to illustrate new errors about using the figures-of-merit NF and IIP, by investigating an AGC-less microwatt ultrawideband g m -boosted CMOS RF system with noise/distortion cancellation. The system composed of limiter and LNA is designed for 0.3-10.7 GHz at 1.8 V. Thanks to the limiter, the impact of noises and distortions is cancelled and the LNA acts linear without any saturation or block, as well as, it becomes AGC-less. Additionally, achievements prove that NF and IIP sometimes can be accompanied by error, hence engineers must always consider all aspects of a system together during their evaluations. Although this work is not experimental, it applies different methods such as "Regenerating", "Comparing Calculations with Simulations" and "Monte Carlo" to demonstrate the reliability of achievements for applying in a SAW-less RFIC.

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Band selection filter for ultra-wideband/Ku dual-band low-noise amplifier in the CMOS process

Cited by 2 publications

References 14 publications

Ultrawideband LNA 1960–2019: Review

Ultrawideband LNA 1960–2019: Review

Noise figure and input intercept point's errors in an AGC‐less microwatt ultrawideband system (limiter and low noise amplifier)

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