Band Offsets at κ-([Al,In]xGa1–x)2O3/MgO Interfaces

Schultz, Thorsten; Kneiß, Max; Storm, Philipp; Splith, Daniel; Wenckstern, Holger von; Grundmann, Marius; Koch, Norbert

doi:10.1021/acsami.9b21128

Cited by 18 publications

(12 citation statements)

References 66 publications

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“…The ΔE v of the AlBN/GaN heterojunction is calculated as follows. [ 35,36 ]

Δ E_{normalV} = {(E_{Ga 3 d}^{AlBN/GaN} - E_{B 1 s}^{AlBN/GaN})}_{AlBN/GaN} + {(E_{normalB 1 normals}^{AlBN} - E_{VBM}^{AlBN})}_{bulk, AlBN} - {(E_{Ga 3 normald}^{GaN} - E_{VBM}^{GaN})}_{bulk, GaN}

where

{(E_{Ga 3 normald}^{AlBN/GaN} - E_{normalB 1 normals}^{AlBN/GaN})}_{AlBN/GaN}

is the energy difference between the Ga 3 d and B 1 s CLs, which are measured in the AlBN/GaN interface samples (AlBN layers thickness is ≈5 nm).

{(E_{B 1 s}^{AlBN} - E_{VBM}^{AlBN})}_{bulk, AlBN}

and

{(E_{Ga 3 d}^{GaN} - E_{VBM}^{GaN})}_{bulk, GaN}

are the energy differences of the CLs and valence band maximum (VBM) binding energy in the bulk AlBN samples (thickness ≈70 nm) and GaN substrates (thickness ≈5 μm), respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Subsequently, ΔE c is determined by the following equation. [ 36 ]

Δ E_{normalc} = E_{normalg}^{AlBN} - E_{normalg}^{GaN} - Δ E_{normalV}

where

E_{normalg}^{AlBN}

and

E_{normalg}^{GaN}

are the bandgaps of AlBN and GaN (3.4 eV), respectively. Using the determined bandgaps of AlBN, the calculated value of ΔE c was 2.67 ± 0.05 and 2.24 ± 0.05 eV for the as‐deposited and 800 °C PDA samples, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The ΔE v of the AlBN/GaN heterojunction is calculated as follows. [35,36] Figure 1. The atomic force microscope images of the surface of the a) as-deposited and b) 800 °C PDA films.…”

Section: Resultsmentioning

confidence: 99%

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High‐Temperature Stability Amorphous Ternary AlBN Dielectric Films on N⁺⁺GaN

Liu

Devaux

et al. 2022

Adv Eng Mater

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Considering the increasing demand for high current density, breakdown field, frequency, and temperature operation performance in III-nitride electronic devices, ensuring the high-temperature stability and reliability of dielectric films has become more challenging. [1][2][3][4] For high-electron-mobility transistors, inserting a dielectric film under gate metal or depositing the passivation with dielectrics on the gate-drain access region effectively reduces gate leakage, enlarges gate swing, and suppresses current collapse, which improve the device performance significantly. [5] Various binary metal oxide/nitride dielectrics, such as SiO 2 , [

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“…The ΔE v of the AlBN/GaN heterojunction is calculated as follows. [ 35,36 ]

Δ E_{normalV} = {(E_{Ga 3 d}^{AlBN/GaN} - E_{B 1 s}^{AlBN/GaN})}_{AlBN/GaN} + {(E_{normalB 1 normals}^{AlBN} - E_{VBM}^{AlBN})}_{bulk, AlBN} - {(E_{Ga 3 normald}^{GaN} - E_{VBM}^{GaN})}_{bulk, GaN}

where

{(E_{Ga 3 normald}^{AlBN/GaN} - E_{normalB 1 normals}^{AlBN/GaN})}_{AlBN/GaN}

is the energy difference between the Ga 3 d and B 1 s CLs, which are measured in the AlBN/GaN interface samples (AlBN layers thickness is ≈5 nm).

{(E_{B 1 s}^{AlBN} - E_{VBM}^{AlBN})}_{bulk, AlBN}

and

{(E_{Ga 3 d}^{GaN} - E_{VBM}^{GaN})}_{bulk, GaN}

are the energy differences of the CLs and valence band maximum (VBM) binding energy in the bulk AlBN samples (thickness ≈70 nm) and GaN substrates (thickness ≈5 μm), respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Subsequently, ΔE c is determined by the following equation. [ 36 ]

Δ E_{normalc} = E_{normalg}^{AlBN} - E_{normalg}^{GaN} - Δ E_{normalV}

where

E_{normalg}^{AlBN}

and

E_{normalg}^{GaN}

Section: Resultsmentioning

confidence: 99%

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High‐Temperature Stability Amorphous Ternary AlBN Dielectric Films on N⁺⁺GaN

Liu

Devaux

et al. 2022

Adv Eng Mater

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“…Research on the In as well as Al alloy systems of the κ ‐phase is still relatively scarce, as up to now only reports on PLD [ 23–25,50,51 ] as well as mist CVD [ 16,44 ] growth are available. However, these alloys can be grown phase pure in a broad composition range [ 23–25,50 ] of

x_{In} \leq 0.35

and

x_{Al} \leq 0.65

.…”

Section: Introductionmentioning

confidence: 99%

“…However, these alloys can be grown phase pure in a broad composition range [ 23–25,50 ] of

x_{In} \leq 0.35

and

x_{Al} \leq 0.65

. The energetic position of the valence band maximum was further found to be independent of the alloy composition, [ 51 ] giving rise to large possible conduction band offsets and widely tunable wavelength ranges in QW

κ - {({Al}_{x} {Ga}_{1 - x})}_{2} {normalO}_{3} / κ - {({In}_{x} {Ga}_{1 - x})}_{2} {normalO}_{3}

heterostructures for QWIP applications (

Δ E_{normalg} \sim 2.5

eV for highest Al and In contents).…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of κ‐(Al_xGa_1−x)₂O₃ Layers and Superlattice Heterostructures up to x = 0.48 on Highly Conductive Al‐Doped ZnO Thin‐Film Templates by Pulsed Laser Deposition

Kneiß

Storm

Hassa

et al. 2020

Physica Status Solidi (b)

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(AlxGa1−x)2O3 thin‐film layers in the metastable orthorhombic κ‐modification are deposited heteroepitaxially on unintentionally doped ZnO buffer layers on heavily Al‐doped and highly conductive ZnO back contact layers by pulsed laser deposition. The back contact layers potentially serve as electrodes for ferroelectric hysteresis measurements and improve the performance of device applications such as Schottky barrier diodes or quantum‐well infrared photodetectors (QWIPs). The alloy layers cover a broad composition range of 0 ≤ x ≤ 0.48 for which X‐ray diffraction (XRD) patterns confirm the same high crystal quality as for layers grown on single‐crystalline substrates. Epitaxial relations of the κ‐phase layers to the ZnO thin‐film templates are determined and both in‐ and out‐of‐plane lattice constants follow a linear evolution with Al content in agreement with Vegard's law. Smooth surface morphologies are verified in atomic force microscopy images. Finally, a 15‐layer‐pair κ‐(Al0.27Ga0.73)2O3/κ‐Ga2)O3 quantum‐well superlattice (SL) structure is similarly deposited on the ZnO:Al back contact layer and shows sharp SL fringes up to the fifth order in XRD measurements confirming excellent crystal quality and abrupt interfaces in the heterostructure. The results render ZnO:Al as a promising back contact layer for QWIP applications and the determination of electrical polarizations of κ‐phase alloy layers.

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Base Metals Induced Oxygen Migration and Adjustable Performance in Multifunctional Oxide Heterojunction Devices

Yang,

Liu,

Chen

et al. 2024

Adv Funct Materials

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The chemical and electronic interactions at metal/oxide heterojunctions is pivotal in determining the electronic properties of oxide devices utilized in microelectronics, catalysis, and photovoltaic systems. In this study, interfacial oxidation migrations within a model heterostructure system, consisting of a La0.7Sr0.3MnO3 film overlaid by various metallic (Ti, Al, Cu, Ag, and Au) ultrathin layers are systematically investigated. It is experimentally demonstrated that at elevated deposition temperature, the oxygen‐active ultrathin overlayers of base metals such as Ti and Al significantly derive oxygen from the underlying La0.7Sr0.3MnO3 film, inducing a perovskite to brownmillerite phase transition in the underlying functional oxide film. Conversely, no structural transitions are observed for La0.7Sr0.3MnO3 film when it is capped by noble metals (Au, Ag), which possess relative high oxidation formation energy. These observations are crucial for the development of novel crystalline and electronic architectures in metal/oxide heterostructures, offering a refined approach to modulate interfacial reactivity without compromising the functionality of oxide‐based heterojunction devices.

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Band Offsets at κ-([Al,In]_xGa_1–x)₂O₃/MgO Interfaces

Cited by 18 publications

References 66 publications

High‐Temperature Stability Amorphous Ternary AlBN Dielectric Films on N⁺⁺GaN

High‐Temperature Stability Amorphous Ternary AlBN Dielectric Films on N⁺⁺GaN

Epitaxial Growth of κ‐(Al_xGa_1−x)₂O₃ Layers and Superlattice Heterostructures up to x = 0.48 on Highly Conductive Al‐Doped ZnO Thin‐Film Templates by Pulsed Laser Deposition

Base Metals Induced Oxygen Migration and Adjustable Performance in Multifunctional Oxide Heterojunction Devices

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Band Offsets at κ-([Al,In]xGa1–x)2O3/MgO Interfaces

Cited by 18 publications

References 66 publications

High‐Temperature Stability Amorphous Ternary AlBN Dielectric Films on N++GaN

High‐Temperature Stability Amorphous Ternary AlBN Dielectric Films on N++GaN

Epitaxial Growth of κ‐(AlxGa1−x)2O3 Layers and Superlattice Heterostructures up to x = 0.48 on Highly Conductive Al‐Doped ZnO Thin‐Film Templates by Pulsed Laser Deposition

Base Metals Induced Oxygen Migration and Adjustable Performance in Multifunctional Oxide Heterojunction Devices

Contact Info

Product

Resources

About

Band Offsets at κ-([Al,In]_xGa_1–x)₂O₃/MgO Interfaces

High‐Temperature Stability Amorphous Ternary AlBN Dielectric Films on N⁺⁺GaN

High‐Temperature Stability Amorphous Ternary AlBN Dielectric Films on N⁺⁺GaN

Epitaxial Growth of κ‐(Al_xGa_1−x)₂O₃ Layers and Superlattice Heterostructures up to x = 0.48 on Highly Conductive Al‐Doped ZnO Thin‐Film Templates by Pulsed Laser Deposition