High‐Temperature Stability Amorphous Ternary AlBN Dielectric Films on N⁺⁺GaN

Abstract

Considering the increasing demand for high current density, breakdown field, frequency, and temperature operation performance in III-nitride electronic devices, ensuring the high-temperature stability and reliability of dielectric films has become more challenging. [1][2][3][4] For high-electron-mobility transistors, inserting a dielectric film under gate metal or depositing the passivation with dielectrics on the gate-drain access region effectively reduces gate leakage, enlarges gate swing, and suppresses current collapse, which improve the device performance significantly. [5] Various binary metal oxide/nitride dielectrics, such as SiO 2 , [