Band offset of GaAs-GaInP heterojunctions

Feng, Shipeng; Krynicki, J.; Donchev, V.; Bourgoin, J. C.; Forte-Poisson, Marie-Antoinette di; Brylinski, C.; Delage, S.; Blanck, H.; Alaya, S.

doi:10.1088/0268-1242/8/12/010

Cited by 30 publications

(6 citation statements)

References 10 publications

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“…The band gap for the lattice-matched alloy Ga 0.51 In 0.49 P is 0.49 eV higher than that of GaAs in the temperature range up to 300 K. An early Shubnikov-de Haas experiment yielded a CBO of 0.39 eV. 824 Watanabe and Ohba measured a smaller CBO of 0.19 eV using the conduction-voltage profiling technique, 825 which is in good agreement with similar studies by Rao et al, 826 Lee et al, 827 and Feng et al, 828 and with the DLTS measurements of Biswas et al 829 Other experiments found that the VBO consitutes an even larger fraction of the band gap discontinuity (⌬E v ϭ0.32-0.46 eV). [830][831][832][833][834][835][836][837] One study obtained a small CBO for the GaInP/AlGaAs heterojunction in the low-Al-fraction limit, 838 while other recent reports have found values intermediate between the two limits.…”

Section: Gainpõalinpõgaassupporting

confidence: 85%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,582

289

3,822

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, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

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Section: Gainpõalinpõgaassupporting

confidence: 85%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,582

289

3,822

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“…4 Time-resolved studies of the low energy PL peak show long nonexponential decay times indicating spatial separation of the electrons and holes. 10 There is even evidence for type II band alignment. Based on these observations, it has been proposed that the samples are not uniformly ordered but exhibit domains of varying degree of order 7 and that the interface between ordered and disordered GaInP has a type II alignment 6,8,9 with the valence band maximum in the disordered and the conduction band minimum in the ordered region.…”

Section: Polarization Fields and Band Offsets In Gainp/gaas And Ordermentioning

confidence: 99%

Polarization fields and band offsets in GaInP/GaAs and ordered/disordered GaInP superlattices

Froyen

Zunger

Mascarenhas

1996

Applied Physics Letters

122

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Using the first-principles pseudopotential method we have calculated band offsets between ordered and disordered Ga0.5In0.5P and between ordered GaInP2 and GaAs. We find valence band offsets of 0.10 and 0.27 eV for the two interfaces with the valence band maximum on ordered GaInP2 and GaAs, respectively. Using experimental band gaps these offsets indicate that the ordered/disordered Ga0.5In0.5P interface has type I band alignment and that the ordered GaInP2/GaAs interface has type II alignment. Assuming transitivity of the band offsets, these results suggest a type I alignment between disordered Ga0.5In0.5P and GaAs and a transition from type I to type II as the GaInP side becomes more ordered. Our calculations also show that ordered GaInP2 has a strong macroscopic electric polarization. This polarization will generate electric fields in inhomogeneous samples, strongly affecting the electronic properties of the material.

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“…However, the offsets of the GaAs/GaInP heterojunction are poorly known, as the reported values of the conduction band offset ⌬E C range from 30 to 390 meV. 2 The wide distribution of measured values may be due to the differences in the samples or in the measuring techniques themselves. We have measured both p-p and n-n type heterojunctions individually, in order to obtain independent values for both the valence band and the conduction band offsets.…”

Section: Introductionmentioning

confidence: 99%

Band offsets at the GaInP/GaAs heterojunction

Lindell

Pessa

Salokatve

et al. 1997

Journal of Applied Physics

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Shifts and splitting of energy bands in elastically strained InGaP/GaAs(111)B epitaxial films J. Appl. Phys. 82, 1214 (1997) We have measured current-voltage curves and the temperature dependence of the zero bias conductance for a p-type Be-doped GaInP/GaAs heterojunction grown by the molecular beam epitaxy method. We have determined the valence band offset ⌬E from both measurements and find it to be 310 meV within 5% of accuracy. Similarly, we find for an n-type Si-doped sample that the conduction band offset ⌬E C is 95 meV. First-principles calculations have been carried out for the atomic and electronic structures of the interfaces. For the thermodynamically favored interfaces, the valence band offset is found not to be sensitive to atomic relaxations at the interface. The calculated values are in good agreement with the experiments.

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Band offset of GaAs-GaInP heterojunctions

Cited by 30 publications

References 10 publications

Band parameters for III–V compound semiconductors and their alloys

Band parameters for III–V compound semiconductors and their alloys

Polarization fields and band offsets in GaInP/GaAs and ordered/disordered GaInP superlattices

Band offsets at the GaInP/GaAs heterojunction

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