Band offset determination of Zn0.53Cd0.47Se/Zn0.29Cd0.24Mg0.47Se

Muñoz, Martı́n; Lü, Hong; Zhou, X.; Tamargo, M. C.; Pollak, Fred H.

doi:10.1063/1.1606875

Cited by 49 publications

(28 citation statements)

References 24 publications

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“…The identification of the signal from the well at 2.08 ± 0.005 eV was straightforward when we considered the 77 K PL signal at 2.156 eV and its thermal energy shift. The value of spin-orbit splitting, Δ 0 = 0.44 eV, was adopted from similar Zn content of ZnCdSe ternary compound [5]. Using obtained value for band gap E 0 and the value of Δ 0 we obtain E 0 + Δ 0 = 2.52 eV, which agrees well with the experimental value of Table 1.…”

Section: Resultssupporting

confidence: 65%

Optical characterization of intersubband transitions in Zn_xCd_1‐xSe/Zn_x′Cd_y′Mg_{1‐x′‐y′}Se asymmetric coupled quantum well structures by contactless electroreflectance

Huang

Huang³

et al. 2010

Phys. Status Solidi (c)

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Contactless electroreflectance (CER) was used to characterize the possible optical transitions in a ZnxCd1‐xSe/Znx′Cdy′Mg1‐x′‐y′Se asymmetric coupled quantum well (ACQW) structure grown by molecular beam epitaxy for quantum cascade laser (QCL) applications. CER spectrum revealed a wide range of the possible optical transitions in ACQW structure. The ground state transition was assigned by comparing with the photoluminescence emission signal taken from the same structure. A comprehensive analysis of the CER spectrum led to the identification of various interband transitions. The intersubband transitions were estimated and confirmed by FTIR measurements. The results demonstrate the potential of using CER as a complimentary technique for the contactless and nondestructive characterization of the wide band gap II‐VI ACQW structures for QCL applications (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultssupporting

confidence: 65%

Optical characterization of intersubband transitions in Zn_xCd_1‐xSe/Zn_x′Cd_y′Mg_{1‐x′‐y′}Se asymmetric coupled quantum well structures by contactless electroreflectance

Huang

Huang³

et al. 2010

Phys. Status Solidi (c)

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“…The parameters used in this calculation were obtained from reference [10]. As seen in Table 1, the calculation agrees well with the measured transitions when the parameter Q c = ∆E c /∆E 0 is equal to 0.80, which is in good agreement with the Q c values reported in reference 10 (0.82 ± 0.02).…”

Section: /Cmsupporting

confidence: 79%

Zn_xCd_1–xSe/Zn_x′Cd_y′Mg_{1–x′–y′}Se multi‐quantum well structures for intersubband devices grown by MBE

Lü

Shen

Muñoz

et al. 2006

Physica Status Solidi (b)

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Quantum well infrared photodetectors (QWIPs) from wide bandgap II -VI compounds are promising as high quantum efficiency detectors in the mid-IR. A series of Cl-doped Zn x Cd (1-x) Se/Zn x′ Cd y′ Mg (1-x′-y′) Se multiple-quantum-wells (MQW) with different quantum well (QW) thicknesses have been grown by MBE lattice-matched to InP substrates. The high material quality of the samples was demonstrated by X-ray diffraction (XRD), steady-state photoluminescence (PL), and time-resolved photoluminescence (t-PL) measurements. Contactless electroreflectance (CER) measurements were performed to investigate high order transitions within the QWs. From these transitions, intersubband transition energies were predicted and compared with the theoretical calculations, a very useful result for device design. Our results indicate that this material system is very promising for intersubband device applications such as QWIPs operating in the 3 -5 µm region.

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“…1 and Table 1, there is very good overall agreement. There is only a small discrepancy in the E1L1 transition attributed to the small compressive strain present in the QW, which blue-shifts the E1L1 transition by 5 meV [5], improving the agreement with the experimental results. The identification of other near lattice-matched systems with large conduction band offsets, such as the one presented here, may yield practical alternatives for the design of QCLs with better performance.…”

Section: Methodssupporting

confidence: 70%

Contactless electroreflectance studies of II–VI nanostructures grown by molecular beam epitaxy

Muñoz

Lü

Guo

et al. 2004

Physica Status Solidi (b)

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The interband transitions of a single quantum well structure of Zn 0.53 Cd 0.47 Se/Zn 0.27 Cd 0.23 Mg 0.50 Se, lattice matched to InP, and of a capped CdSe quantum dot structure have been investigated using contactless electroreflectance. From a comparison of the quantum well optical transitions with those calculated using the envelope function approximation we determined the band offsets for this system. The electroreflectance spectrum of the quantum dot structure shows transitions originating from all the portions of the sample including the quantum dots and the wetting layer. Assuming a lens shape geometry and that the effective height-to-radius ratio observed in uncapped quantum dots is preserved, the size of the capped quantum dots was determined using the observed electroreflectance transitions, and the effective mass approximation. 1 Introduction In recent years there have been increasing efforts in the development of semiconductor nanostructures such as quantum wells (QWs), and quantum dots (QDs). Technological applications such as the development of quantum cascade lasers (QCLs) and the stimulated emission of QD-structures motivate this trend. Considerable advances have been achieved in the development of the QCLs, however, there are still many limitations of these lasers, such as the unavailability of QCLs operating in continuous wave (CW) mode at room temperature (RT) and the absence of QCLs operating at short wavelengths. Both of these limitations can be overcome if materials with larger conduction band offset (CBO) are used for these devices. The optical properties of self-assembled QDs have been widely studied using photoluminescence (PL), photoluminescence excitation spectroscopy, and time resolved photoluminescence, however the information obtained is restricted to lower energy states and does not allow to study the shape of the QD potential or the coupling effects in stacked structures. In this work we present contactless electroreflectance (CER) studies of QW structures to investigate the band offsets of Zn 0.53 Cd 0.47 Se/Zn 0.27 Cd 0.23 Mg 0.50 Se and of CdSe QDs with ZnSe barriers to establish their optical and structural properties. The advantages that CER offers for the spectroscopy of nanostructures are the observation of signals coming from the different parts of the structure and the observation of both ground state and higher order transitions.

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Band offset determination of Zn0.53Cd0.47Se/Zn0.29Cd0.24Mg0.47Se

Cited by 49 publications

References 24 publications

Optical characterization of intersubband transitions in Zn_xCd_1‐xSe/Zn_x′Cd_y′Mg_{1‐x′‐y′}Se asymmetric coupled quantum well structures by contactless electroreflectance

Optical characterization of intersubband transitions in Zn_xCd_1‐xSe/Zn_x′Cd_y′Mg_{1‐x′‐y′}Se asymmetric coupled quantum well structures by contactless electroreflectance

Zn_xCd_1–xSe/Zn_x′Cd_y′Mg_{1–x′–y′}Se multi‐quantum well structures for intersubband devices grown by MBE

Contactless electroreflectance studies of II–VI nanostructures grown by molecular beam epitaxy

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Band offset determination of Zn0.53Cd0.47Se/Zn0.29Cd0.24Mg0.47Se

Cited by 49 publications

References 24 publications

Optical characterization of intersubband transitions in ZnxCd1‐xSe/Znx′Cdy′Mg1‐x′‐y′Se asymmetric coupled quantum well structures by contactless electroreflectance

Optical characterization of intersubband transitions in ZnxCd1‐xSe/Znx′Cdy′Mg1‐x′‐y′Se asymmetric coupled quantum well structures by contactless electroreflectance

ZnxCd1–xSe/Znx′Cdy′Mg1–x′–y′Se multi‐quantum well structures for intersubband devices grown by MBE

Contactless electroreflectance studies of II–VI nanostructures grown by molecular beam epitaxy

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Optical characterization of intersubband transitions in Zn_xCd_1‐xSe/Zn_x′Cd_y′Mg_{1‐x′‐y′}Se asymmetric coupled quantum well structures by contactless electroreflectance

Optical characterization of intersubband transitions in Zn_xCd_1‐xSe/Zn_x′Cd_y′Mg_{1‐x′‐y′}Se asymmetric coupled quantum well structures by contactless electroreflectance

Zn_xCd_1–xSe/Zn_x′Cd_y′Mg_{1–x′–y′}Se multi‐quantum well structures for intersubband devices grown by MBE