Band gap reduction in InN<i>x</i>Sb1-<i>x</i> alloys: Optical absorption, k · P modeling, and density functional theory

Linhart, W. M.; Rajpalke, Mohana K.; Buckeridge, John; Murgatroyd, Philip A. E.; Bomphrey, John James; Alaria, Jonathan; Catlow, C. Richard A.; Scanlon, David O.; Ashwin, M. J.; Veal, T. D.

doi:10.1063/1.4963836

Cited by 9 publications

(3 citation statements)

References 52 publications

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“…Moreover introducing a small amount of nitrogen into the host III-V semiconductor causes a strong reduction of the band-gap energy. This effect has been observed in the dilute nitrides GaNSb [47,48], GaNAs [45], GaInNAs [44], InNAs [49] and also in InNSb [50] and is explained by the conduction band anticrossing model (BAC), where the interaction between the host conduction band and resonant nitrogen level results in the formation of two nonparabolic sub-bands [20,22]. The lowest energy sub-band reduces the band-gap energy.…”

Section: Resultsmentioning

confidence: 87%

Temperature dependence of band gaps in dilute bismides

Linhart¹,

Kudrawiec²

2018

Semicond. Sci. Technol.

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Knowledge about the temperature dependence of the fundamental band-gap energy of semiconductors is very important and constitutes the basis for developing semiconductor devices that work in a wide range of temperatures. Since the 90s, it has been suggested that III−V dilute bismides have temperature insensitive band gaps, and this fact might be important for semiconductor lasers, whose wavelength stays nearly constant through ambient temperature variations. Here, we have reviewed the available information about temperature evolution of the band gap for various III−V dilute bismide semiconductors. It is well known from many experimental results that the band-gap energy decreases monotonically with increasing temperature, and such behavior can be described by the Varshni formula. It is highly desirable for the Varshni temperature coefficient (α parameter) to be very small, indicating temperature insensitivity of the band gap. In this article, information about the band-gap temperature sensitivity or insensitivity is collected for chosen III−V bismides and discussed.

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Section: Resultsmentioning

confidence: 87%

Temperature dependence of band gaps in dilute bismides

Linhart¹,

Kudrawiec²

2018

Semicond. Sci. Technol.

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“…[10][11][12][13] The spin-orbit interaction (SOI) has a strong effect on the valence band structure of both systems, [14][15][16] but is more pronounced in InSb, 17,18 which, combined with a large Landé g-factor (over 50), 19 has meant that InSb has attracted considerable attention in the field of Majorana physics. 20,21 Moreover, GaSb and InSb have both been demonstrated to incorporate N and Bi effectively, resulting in a reduction in band gap [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38] in a similar manner to the more widely studied, GaAs-based dilute nitrides and bismides. 39,40 Alloys can be produced of GaAs, GaSb and InSb, together with the relevant nitrides and/or bismides to tune the optical and electronic properties for a variety of applications; [41][42][43][44][45] indeed, very high efficiency tandem solar cells include an active layer composed of such an alloy.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic point defects and the n - and p -type dopability of the narrow gap semiconductors GaSb and InSb

et al. 2019

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The presence of defects in the narrow-gap semiconductors GaSb and InSb affects their dopability and hence applicability for a range of optoelectronic applications. Here, we report hybrid density functional theory based calculations of the properties of intrinsic point defects in the two systems, including spin orbit coupling effects, which influence strongly their band structures. With the hybrid DFT approach we adopt, we obtain excellent agreement between our calculated band dispersions, structural, elastic and vibrational properties and available measurements. We compute point defect formation energies in both systems, finding that antisite disorder tends to dominate, apart from in GaSb under certain conditions, where cation vacancies can form in significant concentrations. Calculated self-consistent Fermi energies and equilibrium carrier and defect concentrations confirm the intrinsic n-and p-type behaviour of both materials under anion-rich and anion-poor conditions. Moreover, by computing the compensating defect concentrations due to the presence of ionised donors and acceptors, we explain the observed dopability of GaSb and InSb.

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“…In III-V dilute nitrides, the band anticrossing model is used for the conduction band, in contrast to bismides. [14][15][16][17][18][19][20] Both the introduction of nitrogen and bismuth reduce the band-gap, however, nitrogen reduces the lattice constant, while the addition of bismuth increases it. These phenomena are important for the development of new material systems, particularly in band-gap engineering.…”

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confidence: 99%

Temperature-dependent study of GaAs_1−x−yN_xBi_y alloys for band-gap engineering: photoreflectance and k · p modeling

Żuraw

Linhart

Occena

et al. 2020

Appl. Phys. Express

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Photoreflectance measurements were performed for GaAs1−x−yNxBiy layers in the temperature range of 20–300 K. For each sample a transition related to the band-gap was observed, which red-shifts with increasing nitrogen and bismuth content. The temperature dependencies of the band-gap were fitted by the Varshni and Bose–Einstein formulas and simulated within the band anticrossing model of the interaction between the extended band states of the GaAs and the localized states associated with nitrogen and bismuth atoms. The reduction of the band-gap was found to be ∼80–100 meV.

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Band gap reduction in InNxSb1-x alloys: Optical absorption, k · P modeling, and density functional theory

Cited by 9 publications

References 52 publications

Temperature dependence of band gaps in dilute bismides

Temperature dependence of band gaps in dilute bismides

Intrinsic point defects and the n - and p -type dopability of the narrow gap semiconductors GaSb and InSb

Temperature-dependent study of GaAs_1−x−yN_xBi_y alloys for band-gap engineering: photoreflectance and k · p modeling

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Band gap reduction in InNxSb1-x alloys: Optical absorption, k · P modeling, and density functional theory

Cited by 9 publications

References 52 publications

Temperature dependence of band gaps in dilute bismides

Temperature dependence of band gaps in dilute bismides

Intrinsic point defects and the n - and p -type dopability of the narrow gap semiconductors GaSb and InSb

Temperature-dependent study of GaAs1−x−y N x Bi y alloys for band-gap engineering: photoreflectance and k · p modeling

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Temperature-dependent study of GaAs_1−x−yN_xBi_y alloys for band-gap engineering: photoreflectance and k · p modeling