Temperature dependence of band gaps in dilute bismides

Abstract

Knowledge about the temperature dependence of the fundamental band-gap energy of semiconductors is very important and constitutes the basis for developing semiconductor devices that work in a wide range of temperatures. Since the 90s, it has been suggested that III−V dilute bismides have temperature insensitive band gaps, and this fact might be important for semiconductor lasers, whose wavelength stays nearly constant through ambient temperature variations. Here, we have reviewed the available information about temperature evolution of the band gap for various III−V dilute bismide semiconductors. It is well known from many experimental results that the band-gap energy decreases monotonically with increasing temperature, and such behavior can be described by the Varshni formula. It is highly desirable for the Varshni temperature coefficient (α parameter) to be very small, indicating temperature insensitivity of the band gap. In this article, information about the band-gap temperature sensitivity or insensitivity is collected for chosen III−V bismides and discussed.

Az Miktarda Bizmut Eklenen Yarıiletken Alaşımlarının Optik Parametreleri

“…As shown in the figure, the bandgap energy of alloys decreases nonlinearly with increasing Bi composition, and it remains a semiconductor. These results are good agreement with literature [16].…”

“…The addition of a small amount of Bi into binary compounds InAs, InP, and InSb are used to grow their ternary alloys InAsBi, InPBi, and InSbBi. The bandgap of dilute bismides has been obtained by researchers by using different models and methods [16][17][18]. The InSbBi, and InAsBi are narrow band gap semiconductors and InPBi is another important member of the III-Vbismide family of medium band gap semiconductor alloys.…”

Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP

“…Due to the carrier-localization effect, it is impossible to obtain the temperature dependence of bandto-band optical transitions of boron-based III-V alloys relying on emission-like measurements. For that purpose, PR, which is an absorption-and differential-like technique, is a perfect tool to probe transitions between delocalized states and determine their temperature evolution [33,34]. Furthermore, most of the previously studied boron-based structures were deposited on GaAs, for which the optical features from that substrate can overlap with the signal originating from BGaAs or BInGaAs layers.…”

Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers

“…Also several studies suggest that the incorporation of Bi modifies both the conduction and the valence bands [10]. Finally, it was shown that dilute bismide alloys exhibit unusual low bandgap temperature dependence compared to widely used III-V compounds [11,12].…”