Band gap engineering of ZnO thin films by In2O3 incorporation

Gupta, Ram K.; Ghosh, K.; Patel, R.; Mishra, Sanjay R.; Kahol, Pawan K.

doi:10.1016/j.jcrysgro.2008.03.004

Cited by 71 publications

(21 citation statements)

References 21 publications

(20 reference statements)

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“…The GZO films in our study appear to have larger E g compared to undoped ZnO films, due to the increase in carrier concentration caused by the contribution of Ga 3+ ions on substitutional sites of Zn 2+ ions and the higher energy gap resulted from Ga interstitial atoms. Similar results have been reported previously by Chang and Hon [42] and Gupta et al [58] who studied the optical properties of Al-doped ZnO thin films and In-doped ZnO thin films.…”

Section: Optical Propertiessupporting

confidence: 91%

Electrical, optical and microstructural properties of transparent conducting GZO thin films deposited by magnetron sputtering

You

Hua

2012

Journal of Alloys and Compounds

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Section: Optical Propertiessupporting

confidence: 91%

Electrical, optical and microstructural properties of transparent conducting GZO thin films deposited by magnetron sputtering

You

Hua

2012

Journal of Alloys and Compounds

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“…The GZO films in our study appear to have larger E g compared to undoped ZnO films, due to the increase in carrier concentration caused by the contribution of Ga 3+ ions at substitutional sites of Zn 2+ ions and the higher energy-gap resulted from Ga interstitial atoms. Similar results have been reported previously by Chang et al [56] and Gupta et al [57] who studied the optical properties of Al-doped ZnO thin films and In-doped ZnO thin films. Fig.…”

Section: Optical Propertiessupporting

confidence: 91%

Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films

Long

et al. 2015

Materials Science-Poland

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Highly conductive gallium-doped zinc oxide (GZO) transparent thin films were deposited on glass substrates by RF magnetron sputtering. The deposited films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), four-point probe and UV-Vis spectrophotometer, respectively. The effect of growth temperature on the structure and optoelectrical properties of the films was investigated. The results demonstrate that high quality GZO films oriented with their crystallographic c-axis perpendicular to the substrates are obtained. The structure and optoelectrical properties of the films are highly dependent on the growth temperature. It is found that with increasing growth temperature, the average visible transmittance of the deposited films is enhanced and the residual stress in the thin films is obviously relaxed. The GZO films deposited at the growth temperature of 400°C, which have the largest grain size (74.3 nm), the lowest electrical resistivity (1.31 × 10 −3 Ω·cm) and the maximum figure of merit (1.46 × 10 −2 Ω −1 ), exhibit the best optoelectrical properties. Furthermore, the optical properties of the deposited films were determined by the optical characterization methods and the optical energy-gaps were evaluated by extrapolation method. A blue shift of the optical energy gap is observed with an increase in the growth temperature.

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“…It is well known that in n-type semiconductor, the Fermi energy will penetrate into the conduction band because the electron concentration is high enough, which will lead to the decrease of band gap with a further increasing carrier concentration. Gupta et al obtained a larger band gap value (3.37-3.95 eV) for ZnO: In thin films by PLD [17]. Fig.…”

Section: Optical Propertiesmentioning

confidence: 92%

Violet and blue-green luminescence from Ti-doped ZnO films deposited by RF reactive magnetron sputtering

Chen

Ding

2011

Superlattices and Microstructures

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Band gap engineering of ZnO thin films by In2O3 incorporation

Cited by 71 publications

References 21 publications

Electrical, optical and microstructural properties of transparent conducting GZO thin films deposited by magnetron sputtering

Electrical, optical and microstructural properties of transparent conducting GZO thin films deposited by magnetron sputtering

Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films

Violet and blue-green luminescence from Ti-doped ZnO films deposited by RF reactive magnetron sputtering

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