Band gap engineering of indium zinc oxide by nitrogen incorporation

Ortega, J.J.; Aguilar-Frutis, M.; Alarcón, G.; Falcony, C.; Méndez-García, V.H.; Araiza, J. J.

doi:10.1016/j.mseb.2014.05.005

Cited by 15 publications

(15 citation statements)

References 31 publications

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“…Our previous work [13] indicated that N-doping improved the device performance and stability of a-IGZO TFTs by moderately adjusting the Vo concentration and largely suppressing the defects formation in the bulk channels, which was different from undoping and oxygen doping (O-doping). On the other side, N-doping unexpectedly degraded the mobility in a-IGZO:N [12], a-IZO:N [14], and ZnO:N [15], which might be attributed to the suppression of Vo, the main source of free electrons in AOS films [16].…”

Section: Methodsmentioning

confidence: 98%

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

et al. 2017

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Abstract:The nitrogen-doped amorphous oxide semiconductor (AOS) thinfilm transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µ FE = 15.0 cm 2 ·V −1 ·s −1 , SS = 0.5 V/dec, V TH = 1.5 V, I ON /I OFF = 1.1 × 10 8 ) and stability (V TH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs.

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Section: Methodsmentioning

confidence: 98%

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

et al. 2017

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“…1(b), where is presented the bulk layer thickness. When the sputtering power is increased, the ions in the plasma increase its acceleration, and as consequence, at the moment of the impact with the target, as the ionic species are more energetic, they transfer their momentum and energy to the exposed surface, this process led it to sputter more material from the metallic target and resulting in a higher deposition rate and a greater thickness films [15]. The interface layer ( Fig.…”

Section: Thicknessmentioning

confidence: 99%

“…At the same time, amorphous oxynitrides presents homogeneous uniformity and high structural stability even though simple binary oxides tend to crystallize [13,14]. Moreover, the indium zinc oxynitride (IZON) is an excellent semiconductor for band gap engineering applications due to an easy tunable band gap [15,16]. Additionally, it was reported the use of a-IZON thin film on the channel layers of thin films transistors [17], and highlighted that the introduced nitrogen can help reduce oxygen vacancy in the channel layer, suppress carrier concentration and make the devices have a better threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

“…Reactive sputtering is the predominant deposition technique employed to fabricate these oxynitride thin films and their properties are intimately dependent on the deposition parameters including deposition temperature, sputtering power and sputtering gas density, affecting directly to the structural and physical properties of IZON thin films. In a previous investigation [15,18], it was found that by introducing nitrogen (N 2 ) into the argon (Ar) plasma during the deposition of the indium zinc oxide by RF reactive sputtering, the properties of the deposited IZON thin films were very dependent on the amount of nitrogen in the plasma during deposition.…”

Section: Introductionmentioning

confidence: 99%

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Physical properties of reactive RF sputtered a-IZON thin films.

et al. 2019

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The physical properties of amorphous indium zinc oxynitride (a-IZON) thin films, which were deposited at room temperature by reactive RF magnetron sputtering, were investigated. The results of the investigations indicated that the a-IZON films possessed excellent qualities: high transparency with a very low resistivity from 10-3 Ω∙cm to 10-4 Ω∙cm, while the carrier concentration showed values over 1020 cm-3 with mobility between 10 and 21 cm2⸱V-1⸱s-1. The incorporated nitrogen reduces the typical crystallization of IZO and favors the deposition of transparent thin films. These results show that the IZON is an ideal amorphous material for applications in transparent and flexible optoelectronic devices.

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“…1,2 In particular, tuning an electronic structure to achieve a direct band gap is essential in fields like optoelectronics and optics. 1,2 In particular, tuning an electronic structure to achieve a direct band gap is essential in fields like optoelectronics and optics.…”

Section: Introductionmentioning

confidence: 99%

Achieving a direct band gap in oxygen functionalized-monolayer scandium carbide by applying an electric field

Lee

Hwang

Cho

et al. 2014

Phys. Chem. Chem. Phys.

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In the present paper, the band gap characteristics of oxygen functionalized-monolayer scandium carbide (monolayer Sc2CO2) under a perpendicular external electric field (E-field) were studied using DFT calculations for the potential application of MXene in optoelectronic and optical nanodevices. In contrast to general pristine single-layer materials under an external E-field, monolayer Sc2CO2 undergoes an indirect to direct band gap transition under a positive E-field, and the band gap value changes sharply after the band gap transition. Remarkable variations of the band gap properties are induced by the distinct sensitivity between the Γ and K points in the lowest conduction band to the perpendicular E-field, and different types of orbital lead to the dissimilar response of each point. The present work clearly suggests an effective direction to obtain attractive band gap properties in monolayer MXene using an external E-field for next generation optoelectronic and optical devices.

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Band gap engineering of indium zinc oxide by nitrogen incorporation

Cited by 15 publications

References 31 publications

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Physical properties of reactive RF sputtered a-IZON thin films.

Achieving a direct band gap in oxygen functionalized-monolayer scandium carbide by applying an electric field

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