Band gap behavior of scandium aluminum phosphide and scandium gallium phosphide ternary alloys and superlattices

Benalia, S.; Merabet, M.; Rached, D.; Kée, D. De; Abidri, B.; Khenata, R.; Labair, M.

doi:10.1016/j.mssp.2014.12.021

Cited by 15 publications

(2 citation statements)

References 45 publications

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“…Weir [26] has investigated the high pressure phase transitions in the II-VI and III-V compounds, barium selenide, barium sulfide, barium oxide, gallium antimonide, gallium arsenide, and gallium phosphide, while Bouarissa and co-authors [27] have reported on the pressureeffects on band structure and chemical bonding of GaP semiconducting compound using the empirical pseudopotential method (EPM). Benalia et al [28] have studied the band gap behavior of scandium aluminum phosphide and scandium gallium phosphide ternary alloys and superlattices, Benamrani et al [29] have studied structural, elastic and thermodynamic properties of ScP compound, while Rekab-Djabri et al [30] have studied the ground state parameters, electronic properties and elastic constants of CaMg3 intermetallic compound. In the present contribution, we investigate the spatial dependencies of some engeniring moduli, especialy: the Young's modulus, linear compressibility, shear modulus, and Poisson's ratio in GaP binary semiconducting compound based on the experimental stiffness elastic constants Cij reported in the litterature [31].…”

Section: Introductionmentioning

confidence: 99%

Directional dependency of mechanical properties in gallium phosphide semiconducting material

Bioud

2024

IJPR

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The aims of this contibution is to investigate the directional dependency of mechanical properties of gallium phosphide (GaP) semiconduct-ing material using the experimental stiffness elastic constants Cij reported in the litterature. These characteristics are visible by analysis and visualization of elastic tensors. The spatial dependencies of the Young’s modulus, linear compressibility, shear modulus, and Poisson’s ratio in GaP binary compound were calculated and schematized in graphical representations. Data analysis shows that the maximum value Emax of Young's modulus was estimated at around 166.7 GPa, while its minimum value Emin was estimated at around 102.5 GPa, which gives a ratio of approximately Emax/Emin ≈ 1.63, while for the Poisson’s ratio υ, the maximum value υmax of υ was estimated at around 0.43, while its minimum value υmin was estimated at 0.025, which gives a rate of approximately υmax/υmin ≈ 17.5. The Debye temperature was also calculated, it is estimated at about 482.4 K, it is in good agreement with the experimental one (493 K) reported in the litterature, and the deviation between these two values is less than 2.2%.

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Section: Introductionmentioning

confidence: 99%

Directional dependency of mechanical properties in gallium phosphide semiconducting material

Bioud

2024

IJPR

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“…Metal oxides of 3d transition elements such as scandium oxide (Sc 2 O 3 ), titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), nickel oxide (NiO), copper oxides (Cu 2 O), and zinc oxides (ZnO) are being considered as promising materials for optoelectronics and electronic devices. With the development of technology and need to preserve the natural resources, it is important to explore the materials which are nontoxic, naturally abundant, cheap, synthetic [1,2], and have properties usable in variety of applications, such as blue/UV optoelectronic devices, solar cells, sensors, spintronics, and photocatalysis [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Effect of Mg2+ ions substitution on phase formation, structural, morphological, and optical properties of Zn0.1−xMgxO structure

Azad

Kumar

Chand

2021

J Mater Sci: Mater Electron

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In the present research work, Mg-doped zinc oxide Zn 0.1-x Mg x O (For x = 0.000, 0.002, 0.006, 0.010) nanoparticles were synthesized by co-precipitation method. The effect of Mg 2? ions substitution on structural, phase transformation, morphological, and optical properties was investigated using X-ray diffraction (XRD), Raman spectroscopy, Field emission scanning electron microscopy (FE-SEM), and UV-Visible spectroscopy (UV-Vis), respectively. The XRD study shows the formation of pure hexagonal wurtzite phase which was also confirmed using Rietveld refinement performed using Fullprof software. The average crystallite size of Mg-doped zinc oxide nanoparticles calculated using Debye-Scherrer relation found to vary from 43.36 to 36.12 nm with increase in Mg concentration from 0 to 10%. The UV-Vis study reveals the blue shift in optical band gap for all the samples as molar concentration of Mg increases in ZnO lattice which was attributed to quantum confinement effect. Further, results of other studies including XRD viz., Raman, UV-Vis, and FE-SEM show that this method of synthesis can be utilized for increasing the optical band gap of the Zn 0.1-x Mg x O nanocrystals by retaining the pure ZnO phase up to 10% doping of Mg 2? ions concentration.

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A Computational Investigation of the Optoelectronic Characteristics of Chalcopyrite HgCP2

Khan

Gaur

Ahuja

et al. 2022

Intelligent Computing Techniques for Smart Energy Systems

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Band gap behavior of scandium aluminum phosphide and scandium gallium phosphide ternary alloys and superlattices

Cited by 15 publications

References 45 publications

Directional dependency of mechanical properties in gallium phosphide semiconducting material

Directional dependency of mechanical properties in gallium phosphide semiconducting material

Effect of Mg2+ ions substitution on phase formation, structural, morphological, and optical properties of Zn0.1−xMgxO structure

A Computational Investigation of the Optoelectronic Characteristics of Chalcopyrite HgCP2

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